STS10DN3LH5 STMicroelectronics, STS10DN3LH5 Datasheet - Page 3

• Manufacturer Part Number: STS10DN3LH5
• Description: MOSFET 2N-CH 30V 10A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS10DN3LH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10011-2

STS10DN3LH5
1
Electrical ratings
Table 2.
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting T
Table 3.
Symbol
E
Symbol
I
P
DM
I
V
V
AS
T
D
R
R
T
I
TOT
DS
GS
stg
D
thJC
T
thJA
(1)
J
(2)
(3)
J
J
Drain-source voltage (V
Gate-Source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
= 25 °C, I
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering
purpose
D
= 21 A, L= 0.2 mH
Parameter
Parameter
C
Doc ID 15624 Rev 1
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
- 55 to 150
Value
Value
± 22
0.02
100
275
2.5
30
10
40
50
50
7
Electrical ratings
°C/W
°C/W
W/°C
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
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