STS10DN3LH5 STMicroelectronics, STS10DN3LH5 Datasheet - Page 4

• Manufacturer Part Number: STS10DN3LH5
• Description: MOSFET 2N-CH 30V 10A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS10DN3LH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10011-2

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
GS(th)
DS(on)
C
C
Q
Q
DSS
GSS
R
Q
oss
gs1
gs2
iss
rss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source
breakdown Voltage
Zero gate voltage
drain current (V
Gate body leakage
current
(V
Gate threshold voltage V
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
source charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
Parameter
Parameter
th
gate-to-source
gate-to-
GS
= 0)
Doc ID 15624 Rev 1
V
V
V
V
(Figure
V
V
(Figure
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
I
V
V
V
V
V
D
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
DS
DS
= 250 µA, V
= 25 V, f = 1 MHz,
= 0
= 5 V
= 5 V
= 30 V
= 30 V, Tc = 125 °C
= V
= 15 V, I
= 15 V, I
= ± 22 V
= 10 V, I
= 4.5 V, I
Test conditions
Test conditions
14)
19)
GS
, I
D
D
D
D
D
= 250 µA
= 5 A
GS
= 10 A
= 10A
= 5 A
= 0
Min.
Min
30
1
-
-
-
-
0.019
0.023
Typ.
Typ.
0.67
0.84
475
4.6
1.7
1.9
2.5
97
19
STS10DN3LH5
0.021
0.028
Max.
Max.
±
100
10
1
-
-
-
-
Unit
Unit
nC
nC
nC
nC
nC
µA
µA
nA
pF
pF
pF
Ω
Ω
Ω
V
V