STS10DN3LH5 STMicroelectronics, STS10DN3LH5 Datasheet - Page 5

• Manufacturer Part Number: STS10DN3LH5
• Description: MOSFET 2N-CH 30V 10A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS10DN3LH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10011-2

STS10DN3LH5
Table 6.
Table 7.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Symbol
Symbol
I
SDM
t
t
I
d(on)
d(off)
V
RRM
I
Q
t
SD
t
t
SD
r
f
rr
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (resistive load)
Source drain diode
Parameter
Parameter
Doc ID 15624 Rev 1
I
I
di/dt = 100 A/µs,
(Figure 15)
V
R
(Figure 13 and Figure 18)
V
R
(Figure 13 and Figure 18)
SD
SD
DD
DD
G
G
= 5 A, V
= 10 A, V
= 4.7 Ω, V
= 4.7 Ω, V
Test conditions
Test conditions
= 15 V, I
= 15 V, I
GS
DD
D
D
GS
GS
= 0
= 5 A,
= 5 A,
= 25 V
= 10 V
= 10 V
Min.
Min.
Electrical characteristics
-
-
-
-
-
Typ.
Typ.
16.2
2.8
7.8
22
13
4
1
Max.
Max.
1.1
10
40
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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