IRF7304 International Rectifier, IRF7304 Datasheet

MOSFET 2P-CH 20V 4.3A 8-SOIC

IRF7304

Manufacturer Part Number
IRF7304
Description
MOSFET 2P-CH 20V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7304

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
610pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7304

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HEXFET
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Thermal Resistance Ratings
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
D
D
D
DM
R
J,
D
GS
@ T
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
JA
STG
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
®
Power MOSFET
10 Sec. Pulsed Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
GS
@ -4.5V
G 2
G 1
S 2
S 1
1
2
3
4
T o p V iew
8
7
6
5
Typ.
–––
D 1
D 1
D 2
D 2
-55 to + 150
Max.
0.016
-4.7
-4.3
-3.4
-5.0
±12
-17
2.0
R
IRF7304
DS(on)
Max.
V
62.5
DSS
PD - 9.1240C
S O -8
= 0.090
= -20V
Units
°C/W
Units
W/°C
V/ns
°C
A
W
V
8/25/97

Related parts for IRF7304

IRF7304 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient iew Max. @ -4.5V -4 -4.5V -4 -4.5V -3.4 GS -17 2.0 0.016 ±12 -5.0 - 150 Typ. ––– 9.1240C IRF7304 V = -20V DSS R = 0.090 DS(on Units A W W/°C V V/ns °C Max. Units 62.5 °C/W 8/25/97 ...

Page 2

... IRF7304 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics TOP BOTTOM - 1. Fig 2. Typical Output Characteristics -3 Junction T em perature (°C) Fig 4. Normalized On-Resistance IRF7304 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V -1 0µ LSE W IDT 0° rain-to-S ource V oltage ( -4. Vs. Temperature ...

Page 4

... IRF7304 0V iss oss rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° 5° Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage . Fig 6. Typical Gate Charge Vs. 100 150 Single Pulse Fig 8. Maximum Safe Operating Area FO R TES SEE FIG Total Gate Charge (nC ) ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient -4.5 V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10% 125 150 V GS ° d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7304 D.U. µ d(off ...

Page 6

... IRF7304 Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA Current Sampling Resistors Fig 12b. Gate Charge Test Circuit - ...

Page 7

... Logic Level and 3V Drive Devices GS Fig 13. For P-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF7304 + * *** ...

Page 8

... IRF7304 Package Outline SO8 Outline 0.25 (.010 0.25 (.010 Part Marking Information SO8 101 101 ° INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4 ...

Page 9

... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com .00 ( GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7304 . . 4 2 8/97 ...

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