IRF7506TR International Rectifier, IRF7506TR Datasheet - Page 4

• Manufacturer Part Number: IRF7506TR
• Description: MOSFET 2P-CH 30V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7506TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7506
0 . 1
1 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0 . 4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
T = 1 50 °C
C
C
J
-V
C
-V
iss
o s s
rs s
0 . 6
S D
Drain-to-Source Voltage
D S
V
C
C
C
Forward Voltage
, S ource-to-Drain V oltage (V )
, Drain-to-Source V oltage (V)
G S
is s
rs s
os s
= 0V ,
= C
= C
= C
0 . 8
gs
g d
ds
T = 25 °C
+ C
+ C
J
1 0
g d
gd
f = 1MH z
1 . 0
, C
ds
SH OR TED
1 . 2
V
G S
= 0 V
1 . 4
1 0 0
A
A
1 0 0
0 . 1
1 0
2 0
1 6
1 2
1
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
T
T
S ing le Pulse
I
D
A
J
= -1.2 A
Fig 6. Typical Gate Charge Vs.
= 25 °C
= 15 0°C
OPE R ATIO N IN TH IS A RE A LIMITE D
-V
2
D S
Q , Total Gate Charge (nC)
Gate-to-Source Voltage
G
, D rain-to-S ource Voltage (V )
4
BY R
V
V
DS
DS
1 0
6
D S(o n)
= -24 V
= -15 V
FO R TEST C IR C U IT
SEE F IGU R E 9
8
1 ms
10 0µs
10µ s
10m s
1 0
1 0 0
1 2
A
A