AO6602 Alpha & Omega Semiconductor Inc, AO6602 Datasheet

MOSFET N/P-CH COMPL 30V 6-TSOP

AO6602

Manufacturer Part Number
AO6602
Description
MOSFET N/P-CH COMPL 30V 6-TSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO6602

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.1A, 2.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 15V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1077-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO6602
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO6602L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Rev5: Mar 2011
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO6602 uses advanced trench technology to provide
excellent R
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Top View
DS(ON)
B
and low gate charge. The
Pin1
TSOP6
C
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
Bottom View
A
A D
A
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
P
T
Symbol
D
DM
www.aosmd.com
J
DS
GS
D
, T
R
R
G2
G1
S2
STG
JA
JL
Top View
1
2
3
N-Channel
I
R
< 50m (V
< 70m (V
Product Summary
V
Max n-channel
D
DS
DS(ON)
= 3.5A (V
5
4
6
= 30V
1.15
0.73
±20
Typ
106
3.5
30
20
78
64
D1
S1
D2
3
GS
GS
30V Complementary MOSFET
GS
-55 to 150
=10V)
=4.5V)
=10V)
G1
Max p-channel
n-channel
1.15
0.73
Max
±20
-2.7
-2.1
110
150
-30
-15
80
P-Channel
-30V
-2.7A (V
R
< 100m (V
< 170m (V
D1
S1
DS(ON)
G2
GS
AO6602
=-10V)
GS
GS
p-channel
=-10V)
=-4.5V)
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
A
Page 1 of 9
D2
S2

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AO6602 Summary of contents

Page 1

... General Description The AO6602 uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. TSOP6 Top View Bottom View Pin1 Absolute Maximum Ratings T =25° C unless otherwise noted A Parameter ...

Page 2

... C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO6602 Min Typ Max Units 30 1 =55° C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =3.5A D 1.0E+01 40 1.0E+00 125° C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E- 0.0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO6602 125° C 25° C 1.5 2 2.5 3 3.5 4 4.5 V (Volts =10V GS I =3. =4. = ...

Page 4

... DC 1 0.00001 10 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 Pulse Width (s) www.aosmd.com AO6602 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating ...

Page 5

... VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO6602 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

Page 6

P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance ...

Page 7

... Figure 2: Transfer Characteristics (Note E) 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-2.7A D 1.0E+01 40 1.0E+00 1.0E-01 125° C 1.0E-02 1.0E-03 1.0E-04 1.0E- 0.0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO6602 125° C 25° C 1.5 2 2.5 3 3 (Volts =-10V GS I =-2. =-4. =-2A D ...

Page 8

... In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AO6602 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating ...

Page 9

... Resistive Switching Test Circuit & Waveforms d(on) Vgs r - DUT Vdd VDC + Vds 1 Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Vgs -Isd - Vdd VDC - -Vds www.aosmd.com AO6602 Qg Qgd Qgs Charge t off t t d(off) f 90% 10% BV DSS Idt dI/ Vdd Page ...

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