SI1016X-T1-E3 Vishay, SI1016X-T1-E3 Datasheet

MOSFET N/P-CH COMPL 20V SOT563F

SI1016X-T1-E3

Manufacturer Part Number
SI1016X-T1-E3
Description
MOSFET N/P-CH COMPL 20V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1016X-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
485mA, 370mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.485 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1016X-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1016X-T1-E3
Manufacturer:
VISHAY
Quantity:
74 000
Company:
Part Number:
SI1016X-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
Ordering Information: Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
N-Channel
P-Channel
G 1
D 2
S 1
1
2
3
Complementary N- and P-Channel 20 V (D-S) MOSFET
SOT -563
T op V iew
V
SC-89
DS
- 20
20
b
(V)
6
5
4
J
a
= 150 °C)
1.2 at V
1.6 at V
2.7 at V
0.70 at V
0.85 at V
1.25 at V
D 1
G 2
S 2
R
DS(on)
GS
GS
GS
a
GS
GS
GS
Marking Code: A
= - 4.5 V
= - 2.5 V
= - 1.8 V
()
= 4.5 V
= 2.5 V
= 1.8 V
T
T
T
T
A
A
a
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
I
= 25 °C, unless otherwise noted)
D
- 400
- 300
- 150
600
500
350
(mA)
Symbol
T
ESD
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 2000 V ESD Protection
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
• Low Threshold: ± 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
515
370
450
280
145
5 s
Definition
N-Channel, 0.7 
P-Channel, 1.2 
N-Channel
650
20
Steady State
®
485
350
380
250
130
Power MOSFETs
- 55 to 150
2000
± 6
- 390
- 280
- 450
280
145
5 s
P-Channel
- 650
- 20
Vishay Siliconix
Steady State
- 370
- 265
- 380
250
130
Si1016X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1016X-T1-E3 Summary of contents

Page 1

... SOT -563 SC- iew Ordering Information: Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a ...

Page 2

... Si1016X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate Body Leakage GSS Zero Gate Voltage Drain I DSS Current State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a g Forward Transconductance Diode Forward Voltage SD b Dynamic ...

Page 3

... Document Number: 71168 S10-2432-Rev. E, 25-Oct- °C, unless otherwise noted thru 1 2.0 2 600 800 1000 0.6 0.8 Si1016X Vishay Siliconix 1200 °C 1000 C 25 °C 800 125 °C 600 400 200 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 ...

Page 4

... Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.2 I 0.1 0.0 - 0.1 - 0 emperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted °C J 0.8 1.0 1 ...

Page 5

... Gate Charge Document Number: 71168 S10-2432-Rev. E, 25-Oct- °C, unless otherwise noted) A 1000 2 1.8 V 2.0 2 600 800 1000 1.0 1.2 1.4 1.6 Si1016X Vishay Siliconix ° °C 800 600 400 200 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 120 V ...

Page 6

... Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.2 0.1 0.0 - 0.1 - 0 emperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted °C J 0.8 1.0 1 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71168. Document Number: 71168 S10-2432-Rev. E, 25-Oct- °C, unless otherwise noted Square Wave Pulse Duration (s) Si1016X Vishay Siliconix Notes Duty Cycle ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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