SI1024X-T1-E3 Vishay, SI1024X-T1-E3 Datasheet

MOSFET P-CH DUAL 20V SOT563F

SI1024X-T1-E3

Manufacturer Part Number
SI1024X-T1-E3
Description
MOSFET P-CH DUAL 20V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1024X-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
485mA
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.485 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.25ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1024X-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1024X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71170
S10-2432-Rev. D, 25-Oct-10
G
S
D
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
1
2
V
1
2
3
DS
20
(V)
100
SOT-563
Top View
SC-89
0.70 at V
0.85 at V
1.25 at V
b
100
R
DS(on)
J
a
GS
GS
GS
= 150 °C)
Dual N-Channel 20 V (D-S) MOSFET
= 4.5 V
= 2.5 V
= 1.8 V
()
6
5
4
D
G
S
a
2
1
2
Marking Code: C
a
I
D
600
500
350
(mA)
A
= 25 °C, unless otherwise noted)
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Very Small Footprint
• High-Side Switching
• Low On-Resistance: 0.7 
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• 1.8 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
Symbol
T
Definition
Memories
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFET: 1.8 V Rated
515
370
450
280
145
5 s
- 55 to 150
2000
650
± 6
20
Steady State
485
350
380
250
130
Vishay Siliconix
Si1024X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1024X-T1-E3 Summary of contents

Page 1

... 100 Top View Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1024X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 71170 S10-2432-Rev. D, 25-Oct- °C, unless otherwise noted 2 4 600 800 1000 0.6 0 °C 0.8 1.0 1.2 1 Si1024X Vishay Siliconix 100 MHz 80 C iss oss 20 C rss Drain-to-Source Voltage (V) DS Capacitance 1. 600 mA D 1.20 ...

Page 4

... Si1024X Vishay Siliconix TYPICAL CHARACTERISTICS (T 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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