IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet
IRF7314QTRPBF
Specifications of IRF7314QTRPBF
Available stocks
Related parts for IRF7314QTRPBF
IRF7314QTRPBF Summary of contents
Page 1
Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repetitive Avalanche Allowed up to Tjmax • Lead-Free Description These HEXFET ® Power MOSFET’ Dual SO-8 package utilize the lastest ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
Page 3
PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 20µs PULSE WIDTH 0.1 ...
Page 4
1MHz iss rss 1600 oss ds gd 1200 C iss 800 C oss 400 C rss ...
Page 5
T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...
Page 6
-5.2A 0.050 0.040 0.030 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge ...
Page 7
Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 700 TOP Single Pulse BOTTOM 10% Duty Cycle 600 -5.2A 500 400 300 200 100 0 ...
Page 8
SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...
Page 9
SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...