SI1029X-T1-E3 Vishay, SI1029X-T1-E3 Datasheet

MOSFET N/P-CH COMPL 60V SOT563F

SI1029X-T1-E3

Manufacturer Part Number
SI1029X-T1-E3
Description
MOSFET N/P-CH COMPL 60V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1029X-T1-E3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA, 190mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1029X-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1029X-T1-E3
Manufacturer:
ALTERA
0
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
PRODUCT SUMMARY
S
G
D
N-Channel
P-Channel
1
1
2
1
2
3
Complementary N- and P-Channel 60 V (D-S) MOSFET
Top View
SC-89
V
DS
- 60
60
b
(V)
6
5
4
J
a
1.40 at V
= 150 °C)
D
G
S
8 at V
4 at V
3 at V
1
2
2
R
DS(on)
GS
GS
GS
GS
= - 4.5 V
a
= - 10 V
= 4.5 V
()
= 10 V
T
T
T
T
A
A
A
A
Marking Code: H
a
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
I
= 25 °C, unless otherwise noted)
D
- 500
500
200
- 25
(mA)
Symbol
T
ESD
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
320
230
450
280
145
5 s
Definition
N-Channel, 1.40 
P-Channel, 4 
N-Channel
650
60
Steady State
®
305
220
380
250
130
Power MOSFETs
- 55 to 150
2000
± 20
- 200
- 450
- 145
280
145
5 s
P-Channel
- 650
Vishay Siliconix
- 60
Steady State
- 190
- 135
- 380
250
130
Si1029X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1029X-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a ...

Page 2

... Si1029X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Drain-Source Breakdown Voltage V Gate Threshold Voltage GS(th) I Gate-Body Leakage GSS I Zero Gate Voltage Drain Current DSS a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a g Forward Transconductance a V Diode Forward Voltage ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71435 S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted) A 1200 600 800 1000 0.4 0.5 0.6 Si1029X Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics MHz iss 20 ...

Page 4

... Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www.vishay.com °C, unless otherwise noted ° °C J 0.9 1.2 1.5 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature ...

Page 5

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71435 S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted) A 1200 600 800 1000 1.2 1.5 1.8 Si1029X Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics iss oss 8 C rss ...

Page 6

... Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www.vishay.com °C, unless otherwise noted ° °C J 0.9 1.2 1.5 0.5 0 250 µA D 0.3 0.2 0.1 0.0 - 0.1 - 0 Junction Temperature (°C) ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71435. Document Number: 71435 S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1029X Vishay Siliconix Notes Duty Cycle ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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