SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet

MOSFET N/P-CH 20V SC70-6

SI1553DL-T1-E3

Manufacturer Part Number
SI1553DL-T1-E3
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1553DL-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA, 410mA
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.66 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
995mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1553DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1553DL-T1-E3
Manufacturer:
CRUSTRL
Quantity:
6
Part Number:
SI1553DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1553DL-T1-E3
Manufacturer:
VISHAY
Quantity:
30 000
Company:
Part Number:
SI1553DL-T1-E3
Quantity:
70 000
Notes
a.
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
N-Channel
P-Channel
Parameter
V
DS
J
a
-20
20
= 150_C)
a
(V)
Parameter
Complementary 2.5-V (G-S) MOSFET
_
a
G
S
D
1
1
2
a
1
2
3
SC-70 (6-LEADS)
T
T
T
T
0.995 @ V
1.800 @ V
0.385 @ V
0.630 @ V
A
A
A
A
SOT-363
= 25_C
= 85_C
= 25_C
= 85_C
Top View
r
DS(on)
A
GS
GS
GS
GS
= 25_C UNLESS OTHERWISE NOTED)
(W)
= -4.5 V
= -2.5 V
= 4.5 V
= 2.5 V
Symbol
Steady State
Steady State
T
t v 5 sec
6
5
4
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
D
G
S
2
1
2
5 secs
"0.70
"0.50
0.25
0.30
0.16
Symbol
N-Channel
R
R
I
"0.70
"0.54
"0.44
"0.32
thJA
thJF
D
(A)
20
Steady State
Marking Code
RA XX
"0.66
"0.48
0.23
0.27
0.14
Typical
Part # Code
-55 to 150
360
400
300
"1.0
"12
Lot Traceability
and Date Code
5 secs
"0.44
"0.31
-0.25
0.30
0.16
Maximum
P-Channel
Vishay Siliconix
415
460
350
-20
Steady State
Si1553DL
"0.41
"0.30
-0.23
0.27
0.14
www.vishay.com
Unit
_C/W
C/W
Unit
_C
W
V
A
2-1

Related parts for SI1553DL-T1-E3

SI1553DL-T1-E3 Summary of contents

Page 1

... T = 25_C 0. 85_C 0. stg Symbol sec R thJA Steady State Steady State R thJF Si1553DL Vishay Siliconix Marking Code RA XX Lot Traceability and Date Code Part # Code P-Channel Steady State 5 secs Steady State 20 -20 "12 "0.66 "0.44 "0.41 "0.48 "0.31 "0.30 "1.0 0.23 -0.25 -0 ...

Page 2

... Si1553DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 71078 S-21374—Rev. D, 12-Aug- 1 2.0 2 0.8 1.0 0.6 0.8 Si1553DL Vishay Siliconix N−CHANNEL Transfer Characteristics 1.0 0.8 0.6 0 125_C C 0.2 25_C -55 _C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0.1 = 250 -0.0 -0.1 -0.2 -0.3 -0.4 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Drain Current (A) D Document Number: 71078 S-21374—Rev. D, 12-Aug- Square Wave Pulse Duration (sec thru 1.5 V 2.0 2 0.8 1.0 Si1553DL Vishay Siliconix N−CHANNEL - 1 1 P−CHANNEL Transfer Characteristics 1 -55_C C 0.8 25_C 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 V ...

Page 6

... Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 0. 0.0 0.2 0.4 0.6 0 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.3 = 250 0.2 0.1 0.0 -0.1 -0.2 -50 -25 ...

Page 7

... Single Pulse 0. Document Number: 71078 S-21374—Rev. D, 12-Aug- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot - 2 10 Square Wave Pulse Duration (sec) Si1553DL Vishay Siliconix P−CHANNEL Notes Duty Cycle Per Unit Base = R = 400_C/W thJA ( ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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