FDC6000NZ_F077 Fairchild Semiconductor, FDC6000NZ_F077 Datasheet
FDC6000NZ_F077
Specifications of FDC6000NZ_F077
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FDC6000NZ_F077 Summary of contents
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... Thermal Resistance, Junction-to-Case R θJc Package Marking and Ordering Information Device Marking Device .0NZ FDC6000NZ 2004 Fairchild Semiconductor Corporation MOSFET Features • 6 • ESD protection diode (note 3) • High performance trench technology for extremely low R DS(ON) • FLMP SSOT-6 package: Enhanced thermal ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...
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Electrical Characteristics Symbol Parameter Drain–Source Diode Characteristics and Maximum Ratings t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr NOTES the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference ...
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Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Common Drain Configuration Recommended Landing Pattern For Standard Dual Configuration FDC6000NZ RevE1 (W) ...
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Typical Characteristics 4.5V GS 2.5V 3.5V 3.0V 2. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 4.5V GS 1.4 1.2 ...
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Typical Characteristics 6. 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 100µs 10 1ms 10ms ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...