MOSFET N-CH DUAL 20V 7.3A 6-SSOP

FDC6000NZ_F077

Manufacturer Part NumberFDC6000NZ_F077
DescriptionMOSFET N-CH DUAL 20V 7.3A 6-SSOP
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDC6000NZ_F077 datasheet
Product Change Notification
 

Specifications of FDC6000NZ_F077

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs20 mOhm @ 6.5A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C7.3AVgs(th) (max) @ Id1.5V @ 250µA
Gate Charge (qg) @ Vgs11nC @ 4.5VInput Capacitance (ciss) @ Vds840pF @ 10V
Power - Max1.2WMounting TypeSurface Mount
Package / Case6-SSOT FLMP, SuperSOT-6 FLMPLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,
the R
and thermal properties of the device are
DS(ON)
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Load switch
S2
S2
S1
S1
G1
G1
S2
S2
S1
S1
TM
TM
SuperSOT-6
SuperSOT-6
FLMP
FLMP
MOSFET Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
Power Dissipation for Dual Operation
D
Power Dissipation for Single Operation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
θJA
Thermal Resistance, Junction-to-Case
R
θJc
Package Marking and Ordering Information
Device Marking
Device
.0NZ
FDC6000NZ
2004 Fairchild Semiconductor Corporation
MOSFET
Features
• 6.5 A, 20 V
• ESD protection diode (note 3)
• High performance trench technology for extremely
low R
DS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
G2
G2
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Reel Size
7’’
June 2004
R
= 20 mΩ @ V
= 4.5 V
DS(ON)
GS
R
= 28 mΩ @ V
= 2.5 V
DS(ON)
GS
Bottom Drain Contact
4
3
2
5
1
6
Bottom Drain Contact
Ratings
Units
20
V
±12
V
7.3
A
20
1.6
W
1.8
1.2
–55 to +150
°C
°C/W
68
1
Tape width
Quantity
8mm
3000 units
FDC6000NZ Rev E1 (W)

FDC6000NZ_F077 Summary of contents

  • Page 1

    ... Thermal Resistance, Junction-to-Case R θJc Package Marking and Ordering Information Device Marking Device .0NZ FDC6000NZ 2004 Fairchild Semiconductor Corporation  MOSFET Features • 6 • ESD protection diode (note 3) • High performance trench technology for extremely low R DS(ON) • FLMP SSOT-6 package: Enhanced thermal ...

  • Page 2

    Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

  • Page 3

    Electrical Characteristics Symbol Parameter Drain–Source Diode Characteristics and Maximum Ratings t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr NOTES the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference ...

  • Page 4

    Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Common Drain Configuration Recommended Landing Pattern For Standard Dual Configuration FDC6000NZ RevE1 (W) ...

  • Page 5

    Typical Characteristics 4.5V GS 2.5V 3.5V 3.0V 2. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 4.5V GS 1.4 1.2 ...

  • Page 6

    Typical Characteristics 6. 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 100µs 10 1ms 10ms ...

  • Page 7

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...