FDC6020C_F077 Fairchild Semiconductor, FDC6020C_F077 Datasheet

MOSFET N P-CH 20V 6-SSOP

FDC6020C_F077

Manufacturer Part Number
FDC6020C_F077
Description
MOSFET N P-CH 20V 6-SSOP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC6020C_F077

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 5.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.9A, 4.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
677pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
6-SSOT FLMP, SuperSOT-6 FLMP
Configuration
Dual Dual Source
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.027 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.9 A @ N Channel or 4.2 A @ P Channel
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6020C_F077
Manufacturer:
Fairchild Semiconductor
Quantity:
42 544
FDC6020C
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
2003 Fairchild Semiconductor Corporation
Complementary PowerTrench
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
θJA
θJC
, T
DC/DC converter
Load switch
Motor Driving
Device Marking
STG
resistance
.020
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
and
FDC6020C
yet
- Continuous
- Pulsed
Device
maintain
Parameter
superior
T
A
= 25°C unless otherwise noted
MOSFET
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Features
Q1 –4.2 A, –20V. R
Q2
Low gate charge
High performance trench technology for extremely
low R
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
5.9 A, 20V.
DS(ON)
–4.2
.
Q1
–20
±12
–20
4
4
5
5
6
6
Tape width
Bottom Drain Contact
Bottom Drain Contact
Bottom Drain Contact
Bottom Drain Contact
–55 to +150
8mm
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
1.6
1.8
1.2
68
1
Q2 (N)
Q2 (N)
Q1 (P)
Q1 (P)
= 55 mΩ @ V
= 82 mΩ @ V
= 27 mΩ @ V
= 39 mΩ @ V
November 2003
Q2
±12
5.9
20
20
3
3
2
2
1
1
FDC6020C Rev B(W)
GS
GS
GS
GS
3000 units
Quantity
= – 4.5 V
= – 2.5 V
= 4.5 V
= 2.5 V
Units
°C/W
°C
W
V
V
A

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FDC6020C_F077 Summary of contents

Page 1

... STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device .020 FDC6020C 2003 Fairchild Semiconductor Corporation  MOSFET Features • Q1 –4.2 A, –20V. R • Q2 5.9 A, 20V. superior • Low gate charge • High performance trench technology for extremely low R ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown DSS Voltage ∆BV Breakdown Voltage DSS Temperature Coefficient ∆ Zero Gate Voltage Drain DSS Current I Gate-Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

Page 3

Electrical Characteristics Symbol Parameter Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward SD Voltage t Diode Reverse Recovery rr Time Q Diode Reverse Recovery rr Charge Notes ...

Page 4

Typical Characteristics : -4.5V GS -3.0V -3. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -4. -4.5V GS ...

Page 5

Typical Characteristics : -4. - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 ...

Page 6

Typical Characteristics : 4.5V 3.0V GS 2. DRAIN-SOURCE VOLTAGE (V) DS Figure 11. On-Region Characteristics 4.5V GS 1.4 ...

Page 7

Typical Characteristics : 5. GATE CHARGE (nC) g Figure 17. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 ...

Page 8

Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Standard Dual Configuration FDC6020C RevB (W) ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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