FDC6036P_F077 Fairchild Semiconductor, FDC6036P_F077 Datasheet

MOSFET P-CH DUAL 20V 5A 6SSOT

FDC6036P_F077

Manufacturer Part Number
FDC6036P_F077
Description
MOSFET P-CH DUAL 20V 5A 6SSOT
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC6036P_F077

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
44 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
992pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-SSOT FLMP, SuperSOT-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDC6036P
P-Channel 1.8V Specified PowerTrench
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the R
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
2009 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
.036
Symbol
V
V
I
P
T
R
R
D
J
DSS
GSS
D
θJA
θJC
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
– Continuous
– Pulsed
FDC6036P
Parameter
DS(ON)
and thermal
T
A
=25
o
C unless otherwise noted
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
MOSFET
Features
• –5 A, –20 V. R
• Low gate charge, High Power and Current handling
• High performance trench technology for extremely
• FLMP SSOT-6 package: Enhanced thermal
capability
low R
performance in industry-standard package size
DS(ON)
4
5
6
Bottom Drain Contact
Bottom Drain Contact
R
R
–55 to +150
8mm
Ratings
DS(ON)
DS(ON)
DS(ON)
–20
–20
1.8
1.8
0.9
±8
–5
68
1
= 44 mΩ @ V
= 64 mΩ @ V
= 95 mΩ @ V
3
2
1
February 2009
GS
GS
GS
3000 units
FDC6036P Rev C3 (W)
= –4.5 V
= –2.5 V
= –1.8 V
Units
°C/W
°C
W
V
V
A

Related parts for FDC6036P_F077

FDC6036P_F077 Summary of contents

Page 1

... R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information .036 FDC6036P 2009 Fairchild Semiconductor Corporation  MOSFET Features • –5 A, – and thermal • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source BreakdownVoltage V DSS ∆BV Breakdown Voltage Temperature DSS Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

Page 3

Electrical Characteristics NOTES the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC ...

Page 4

Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC6036P Rev C3 (W) ...

Page 5

Typical Characteristics 20 V =-4.5V GS -2.5V 15 -2. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics -4.5V GS 1.3 1.2 1.1 1 0.9 ...

Page 6

Typical Characteristics -5A Vds = - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON 10ms 100ms 1s 1 ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...

Related keywords