FDC6036P_F077 Fairchild Semiconductor, FDC6036P_F077 Datasheet - Page 5

• Manufacturer Part Number: FDC6036P_F077
• Description: MOSFET P-CH DUAL 20V 5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6036P_F077

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 992pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
15
12
20
15
10
1.4
1.3
1.2
1.1
0.9
0.8
9
6
3
0
5
0
0.5
1
Figure 3. On-Resistance Variation with
0
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
GS
V
DS
=-4.5V
V
GS
I
= -5V
D
-25
= -5A
= -4.5V
1
-V
1
-V
GS
T
0
J
, GATE TO SOURCE VOLTAGE (V)
DS
, JUNCTION TEMPERATURE (
-2.5V
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
25
2
1.5
50
-2.0V
T
3
A
75
= -55
-1.8V
o
-1.5V
C
o
100
C)
2
125
4
o
C
125
25
o
C
150
2.5
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.01
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
1
0
1
0
Drain Current and Gate Voltage.
V
T
V
GS
A
GS
= 25
= 0V
=-1.8V
Gate-to-Source Voltage.
o
0.2
C
-V
SD
T
-V
, BODY DIODE FORWARD VOLTAGE (V)
A
5
2
GS
= 125
-2.0V
, GATE TO SOURCE VOLTAGE (V)
T
-I
0.4
A
D
o
, DRAIN CURRENT (A)
= 125
C
25
o
-2.5V
o
C
C
10
0.6
3
-55
o
C
0.8
15
4
FDC6036P Rev C3 (W)
I
D
-4.5V
= -2.5A
1
1.2
20
5