SI4910DY-T1-E3 Vishay, SI4910DY-T1-E3 Datasheet

MOSFET N-CH DUAL 40V 7.6A 8-SOIC

SI4910DY-T1-E3

Manufacturer Part Number
SI4910DY-T1-E3
Description
MOSFET N-CH DUAL 40V 7.6A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4910DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
855pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.027 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4910DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4910DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 954
Part Number:
SI4910DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Parameter
V
DS
40
(V)
G
G
S
S
1
1
2
2
C
= 25 °C.
0.032 at V
0.027 at V
1
2
3
4
R
Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
Top View
SO-8
GS
GS
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, d
Dual N-Channel 40-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
1
1
2
2
D
6.0
4.8
(A)
a
A
Q
= 25 °C, unless otherwise noted
Steady-State
g
9.6
(Typ.)
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Available
CCFL Inverter
Symbol
R
R
thJA
thJF
G
1
Symbol
T
N-Channel MOSFET
J
g
V
V
E
I
I
I
P
, T
DM
SM
I
I
AS
GS
DS
D
AS
and UIS Tested
S
D
®
stg
Power MOSFET
D
S
1
1
Typ.
49
30
- 55 to 150
1.28
6.0
4.8
1.6
Limit
± 16
2
G
7.6
6.0
2.6
3.1
40
20
20
10
b, c
5
2
2
b, c
b, c
b, c
b, c
N-Channel MOSFET
Vishay Siliconix
Max.
62.5
40
Si4910DY
D
S
2
2
www.vishay.com
Unit
°C
W
V
A
°C/W
Unit
1

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SI4910DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free) Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4910DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q – Total Gate Charge (nC) g Gate Charge Document Number: 73699 S09-0540-Rev. B, 06-Apr- 1.5 2.0 2 13.2 17.6 22.0 Si4910DY Vishay Siliconix 2.0 1.6 1.2 0 125 0.0 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 1400 ...

Page 4

... Si4910DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 0.1 0.01 0.001 0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µ 0.2 - 0.4 - 0 – Temperature ( C) J Threshold Voltage www.vishay.com 0.8 1.0 1.2 75 100 ...

Page 5

... T – Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4910DY Vishay Siliconix 125 150 1.5 1.2 0.9 0.6 0.3 0 100 T – Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... Si4910DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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