SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet

MOSFET N/P-CH 60V 8-SOIC

SI4559ADY-T1-GE3

Manufacturer Part Number
SI4559ADY-T1-GE3
Description
MOSFET N/P-CH 60V 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4559ADY-T1-GE3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.3A, 3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
665pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A @ N Channel or 3 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
46mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4559ADY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4559ADY-T1-GE3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4559ADY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
57 461
Part Number:
SI4559ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4559ADY-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
N-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
P-Channel
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
G
S
S
C
V
1
1
2
2
= 25 °C.
DS
- 60
60
(V)
1
2
3
4
Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.150 at V
0.120 at V
0.072 at V
0.058 at V
Top View
SO-8
R
J
N- and P-Channel 60-V (D-S) MOSFET
DS(on)
= 150 °C)
b, d
GS
GS
GS
GS
= - 4.5 V
(Ω)
= - 10 V
= 4.5 V
= 10 V
8
7
6
5
D
D
D
D
1
1
2
2
I
D
- 3.9
- 3.5
5.3
4.7
(A)
A
a
= 25 °C, unless otherwise noted
Q
Steady State
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
g
6 nC
8 nC
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
(Typ.)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• CCFL Inverter
Symbol
Symbol
T
R
R
J
V
V
E
I
I
Available
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
G
and UIS Tested
Typ.
®
1
55
33
N-Channel
N-Channel
Power MOSFET
N-Channel MOSFET
4.3
3.4
1.7
1.3
2
5.3
4.3
2.6
6.1
3.1
60
20
20
11
b, c
2
b, c
b, c
b, c
b, c
Max.
62.5
40
- 55 to 150
D
S
1
1
± 20
Typ.
53
30
P-Channel
P-Channel
- 3.0
- 2.4
- 1.7
1.3
- 3.9
- 3.2
- 2.8
2
- 60
- 25
- 25
Vishay Siliconix
3.4
2.2
15
11
b, c
b, c
b, c
b, c
b, c
Si4559ADY
Max.
G
62.5
37
2
P-Channel MOSFET
www.vishay.com
°C/W
S
D
Unit
Unit
mJ
2
°C
2
W
V
A
1

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SI4559ADY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free) Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4559ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... N-Channel = 8.8 Ω ≅ 3 GEN g P-Channel t d(off) = 12.5 Ω ≅ GEN ° 1 N-Channel 1.7 A, dI/dt = 100 A/µ P-Channel dI/ 100 A/µ Si4559ADY Vishay Siliconix a Typ. Min. Max N-Ch 65 100 = 1 Ω P-Ch 70 105 N- P- Ω Ω Ω N-Ch 2 ...

Page 4

... Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.2 0.4 0.6 0.8 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.080 0.075 0.070 0.065 0.060 0.055 0.050 0.045 0.040 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4.3 A ...

Page 5

... D 75 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0.001 0 Drain-to-Source Voltage (V) DS > minimum V at which DS(on) Safe Operating Area Si4559ADY Vishay Siliconix 0.12 0.11 0.10 0.09 0. 0.06 0.05 0. Gate-to-Source V oltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0 Time (s) Single Pulse Power, Junction-to-Ambient 100 µ ...

Page 6

... Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 73624 S09-0393-Rev. B, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4559ADY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

Page 8

... Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.40 0.35 0.30 0. 0.15 0.10 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current 3 Total Gate Charge (nC) g Gate Charge www.vishay.com 1000 125 ° ° ° ...

Page 9

... Limited DS(on D(on) Limited 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si4559ADY Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power Limited P(t) = 0.0001 P(t) = 0.001 P(t) = 0.01 P( ...

Page 10

... Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73624. Document Number: 73624 S09-0393-Rev. B, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4559ADY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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