SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet

MOSFET DUAL N-CH 30V 8-SOIC

SI4916DY-T1-E3

Manufacturer Part Number
SI4916DY-T1-E3
Description
MOSFET DUAL N-CH 30V 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4916DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.5A, 7.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Power - Max
1.9W, 2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.5 A @ Channel 1 or 7.8 A @ Channel 2
Power Dissipation
1900 mW @ Channel 1 or 2000 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14.5mohm
Rds(on) Test Voltage Vgs
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4916DY-T1-E3TR
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
Channel-1
Channel-2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
DS
30
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
D
D
G
S
C
1
1
2
2
V
= 25 °C.
DS
30
1
2
3
4
(V)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
0.023 at V
0.022 at V
0.018 at V
0.018 at V
T op V i e w
0.50 V at 1.0 A
SO-8
R
V
J
a, b
DS(on)
SD
= 150 °C)
(V)
GS
GS
GS
GS
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
8
7
6
5
a, b
G
S
S
S
1
1
1
1
/D
/D
/D
I
2
2
2
D
10.5
8.5
9.3
10
(A)
a
A
= 25 °C, unless otherwise noted
I
Q
F
2.0
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
(A)
6.6
8.9
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• 100 % R
• DC/DC Converters
Symbol
T
J
Available
- Notebook
V
V
E
I
I
I
P
, T
I
DM
SM
I
AS
DS
GS
AS
D
S
D
stg
g
N-Channel 1
N-Channel 2
MOSFET
MOSFET
Tested
G
G
1
2
Channel-1
7.5
1.7
1.9
1.2
®
6
a ,b, c
3.3
2.1
10
40
40
Plus Integrated Schottky
a, b, c
a, b, c
a, b, c
a, b, c
8
3
- 55 to 150
D
S
1
2
11.2
30
20
15
Channel-2
7.8
6.3
1.8
2.0
1.3
10.5
8.3
3.2
3.5
2.2
40
40
Schottky Diode
a, b, c
a, b, c
a, b, c
a, b, c
a, b, c
Vishay Siliconix
S
1
/D
Si4916DY
2
www.vishay.com
Unit
mJ
°C
W
V
A
1

Related parts for SI4916DY-T1-E3

SI4916DY-T1-E3 Summary of contents

Page 1

... Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Δ ...

Page 3

... A, dI/dt = 100 µA/µ 1.3 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 µA/µ °C, unless otherwise noted J Test Conditions 125 ° 100 ° 125 ° Si4916DY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 12 Ch-1 ...

Page 4

... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.00 0.30 0.60 V – Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 V 0.013 0.010 – Drain Current (A) D On-Resistance vs. Drain Current 7 – Total Gate Charge (nC) g Gate Charge www.vishay.com ...

Page 5

... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BVDSS Limited 0.01 0 – Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4916DY Vishay Siliconix 0.05 0. 0.02 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 120 100 0.001 0.01 0.1 ...

Page 6

... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient ...

Page 7

... Total Gate Charge (nC) g Gate Charge Document Number: 74331 S09-0540-Rev. B, 06-Apr- thru 0.9 1.2 1.5 1400 1120 6.6 8.8 11.0 Si4916DY Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 8

... Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage – Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 0.05 0.04 0. °C J 0.02 0.01 0.00 1.0 1 ...

Page 9

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74331. Document Number: 74331 S09-0540-Rev. B, 06-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4916DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 10

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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