MOSFET DUAL N-CH 30V 8-SOIC

SI4916DY-T1-E3

Manufacturer Part NumberSI4916DY-T1-E3
DescriptionMOSFET DUAL N-CH 30V 8-SOIC
ManufacturerVishay
SI4916DY-T1-E3 datasheet
 

Specifications of SI4916DY-T1-E3

Transistor PolarityN-ChannelFet Type2 N-Channel (Dual)
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs18 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)30VCurrent - Continuous Drain (id) @ 25° C7.5A, 7.8A
Vgs(th) (max) @ Id3V @ 250µAGate Charge (qg) @ Vgs10nC @ 4.5V
Power - Max1.9W, 2WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Minimum Operating Temperature- 55 C
ConfigurationDualResistance Drain-source Rds (on)0.018 Ohm @ 10 V
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage20 V
Continuous Drain Current7.5 A @ Channel 1 or 7.8 A @ Channel 2Power Dissipation1900 mW @ Channel 1 or 2000 mW @ Channel 2
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Continuous Drain Current Id7.5ADrain Source Voltage Vds30V
On Resistance Rds(on)14.5mohmRds(on) Test Voltage Vgs20V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSI4916DY-T1-E3TR
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Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
(V)
R
(Ω)
DS
DS(on)
0.018 at V
= 10 V
GS
Channel-1
0.023 at V
= 4.5 V
GS
30
0.018 at V
= 10 V
GS
Channel-2
0.022 at V
= 4.5 V
GS
SCHOTTKY PRODUCT SUMMARY
V
(V)
SD
V
(V)
Diode Forward Voltage
DS
30
0.50 V at 1.0 A
SO-8
D
1
8
1
D
2
7
1
G
3
6
2
S
4
5
2
T op V i e w
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
a, b
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
a, b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Notes:
a. Based on T
= 25 °C.
C
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
FEATURES
• Halogen-free According to IEC 61249-2-21
a
Q
(Typ.)
I
(A)
g
D
Available
10
• LITTLE FOOT
6.6
8.5
• 100 % R
10.5
8.9
APPLICATIONS
9.3
• DC/DC Converters
- Notebook
I
(A)
F
2.0
G
1
S
/D
1
2
S
/D
1
2
S
/D
1
2
= 25 °C, unless otherwise noted
A
Symbol
V
DS
V
GS
T
= 25 °C
C
T
= 70 °C
C
I
D
T
= 25 °C
A
T
= 70 °C
A
I
DM
T
= 25 °C
C
I
S
T
= 25 °C
A
I
SM
I
AS
L = 0.1 mH
E
AS
T
= 25 °C
C
T
= 70 °C
C
P
D
T
= 25 °C
A
T
= 70 °C
A
T
, T
J
stg
Si4916DY
Vishay Siliconix
®
Plus Integrated Schottky
Tested
g
D
1
G
1
N-Channel 1
MOSFET
S
/D
1
2
Schottky Diode
G
2
N-Channel 2
MOSFET
S
2
Channel-1
Channel-2
30
20
10
10.5
8
8.3
a, b, c
a, b, c
7.5
7.8
a ,b, c
a, b, c
6
6.3
40
40
3
3.2
a, b, c
a, b, c
1.7
1.8
40
40
15
11.2
3.3
3.5
2.1
2.2
a, b, c
a, b, c
1.9
2.0
a, b, c
a, b, c
1.2
1.3
- 55 to 150
www.vishay.com
Unit
V
A
mJ
W
°C
1

SI4916DY-T1-E3 Summary of contents

  • Page 1

    ... Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy ...

  • Page 2

    ... Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Δ ...

  • Page 3

    ... A, dI/dt = 100 µA/µ 1.3 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 µA/µ °C, unless otherwise noted J Test Conditions 125 ° 100 ° 125 ° Si4916DY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 12 Ch-1 ...

  • Page 4

    ... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.00 0.30 0.60 V – Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 V 0.013 0.010 – Drain Current (A) D On-Resistance vs. Drain Current 7 – Total Gate Charge (nC) g Gate Charge www.vishay.com ...

  • Page 5

    ... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BVDSS Limited 0.01 0 – Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4916DY Vishay Siliconix 0.05 0. 0.02 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 120 100 0.001 0.01 0.1 ...

  • Page 6

    ... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient ...

  • Page 7

    ... Total Gate Charge (nC) g Gate Charge Document Number: 74331 S09-0540-Rev. B, 06-Apr- thru 0.9 1.2 1.5 1400 1120 6.6 8.8 11.0 Si4916DY Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

  • Page 8

    ... Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage – Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 0.05 0.04 0. °C J 0.02 0.01 0.00 1.0 1 ...

  • Page 9

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74331. Document Number: 74331 S09-0540-Rev. B, 06-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4916DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

  • Page 10

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...