SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet
SI4916DY-T1-E3
Specifications of SI4916DY-T1-E3
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SI4916DY-T1-E3 Summary of contents
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... Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy ...
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... Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Δ ...
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... A, dI/dt = 100 µA/µ 1.3 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 µA/µ °C, unless otherwise noted J Test Conditions 125 ° 100 ° 125 ° Si4916DY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 12 Ch-1 ...
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... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.00 0.30 0.60 V – Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 V 0.013 0.010 – Drain Current (A) D On-Resistance vs. Drain Current 7 – Total Gate Charge (nC) g Gate Charge www.vishay.com ...
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... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BVDSS Limited 0.01 0 – Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4916DY Vishay Siliconix 0.05 0. 0.02 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 120 100 0.001 0.01 0.1 ...
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... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 74331 S09-0540-Rev. B, 06-Apr- thru 0.9 1.2 1.5 1400 1120 6.6 8.8 11.0 Si4916DY Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...
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... Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage – Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 0.05 0.04 0. °C J 0.02 0.01 0.00 1.0 1 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74331. Document Number: 74331 S09-0540-Rev. B, 06-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4916DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...