SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4916DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4916DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 7.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Power - Max: 1.9W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 7.8 A @ Channel 2
• Power Dissipation: 1900 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4916DY-T1-E3TR

Si4916DY
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
b
a
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
V
DS(on)
V
GS(th)
D(on)
Q
Q
GSS
DSS
DS
g
Q
R
J
DS
SD
fs
gs
gd
g
g
= 25 °C, unless otherwise noted
/T
Steady State
/T
J
J
t ≤ 10 s
V
DS
V
V
DS
DS
= 15 V, V
= 15 V, V
= 30 V, V
V
V
V
V
V
V
V
V
V
V
V
I
DS
GS
DS
GS
GS
GS
S
DS
DS
DS
I
GS
DS
S
= 1.7 A, V
= V
= 1 A, V
= 10 V, I
= 15 V, I
Symbol
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 0 V, V
= 30 V, V
= 5 V, V
I
= 10 V, I
= 15 V, I
R
R
D
Channel-1
Channel-2
GS
Test Conditions
thJA
thJF
GS
= 250 µA
GS
GS
= 4.5 V, I
, I
= 4.5 V, I
= 0 V, T
D
D
GS
GS
GS
D
D
GS
= 250 µA
D
D
D
D
= 250 µA
GS
= 10.5 A
= 10.5 A
= 10 A
= 8.5 A
= 9.3 A
= 10 A
= 0 V
= 10 V
= 20 V
= 0 V
= 0 V
D
J
D
= - 10.5 A
Typ.
= 85 °C
54
32
= 10 A
Channel-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Max.
65
38
Min.
1.5
1.5
0.5
0.5
30
30
20
20
Typ.
47
30
0.0145
Channel-2
Typ.
0.015
0.019
0.018
S09-0540-Rev. B, 06-Apr-09
0.75
0.47
6.6
8.9
2.9
3.4
2.3
2.4
1.9
2.3
24
25
- 6
- 6
30
35
Document Number: 74331
a
Max.
0.018
0.018
0.023
0.022
60
35
Max.
2000
100
100
100
3.0
2.7
1.1
0.5
2.9
3.5
15
10
14
1
mV/°C
°C/W
Unit
Unit
nA
µA
nC
Ω
Ω
V
V
A
S
V