SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4916DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4916DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 7.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Power - Max: 1.9W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 7.8 A @ Channel 2
• Power Dissipation: 1900 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4916DY-T1-E3TR

Si4916DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.025
0.022
0.019
0.016
0.013
0.010
40
35
30
25
20
15
10
6
5
4
3
2
1
0
5
0
0.00
0
0
I
D
5
1
= 7.5 A
V
On-Resistance vs. Drain Current
GS
0.30
V
= 4.5 V
10
2
DS
Q
Output Characteristics
I
g
D
– Drain-to-Source Voltage (V)
– Total Gate Charge (nC)
3
– Drain Current (A)
15
0.60
Gate Charge
4
V
20
DS
V
V
= 10 V
GS
GS
5
0.90
25
= 10 thru 5 V
= 10 V
6
V
30
DS
1.20
7
4 V
= 15 V
35
3 V
8
1.50
40
9
1050
900
750
600
450
300
150
1.6
1.4
1.2
1.0
0.8
0.6
40
35
30
25
20
15
10
0
5
0
- 50
0
0
V
I
D
On-Resistance vs. Junction Temperature
GS
= 7.5 A
- 25
= 10 V and 4.5 V
C
rss
6
1
V
T
GS
V
Transfer Characteristics
0
J
DS
– Junction Temperature (°C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
C
T
12
2
25 °C
C
oss
= 125 °C
S09-0540-Rev. B, 06-Apr-09
C
50
iss
Document Number: 74331
18
75
3
100
- 55 °C
24
4
125
150
30
5