SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet - Page 5

MOSFET DUAL N-CH 30V 8-SOIC

SI4916DY-T1-E3

Manufacturer Part Number
SI4916DY-T1-E3
Description
MOSFET DUAL N-CH 30V 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4916DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.5A, 7.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Power - Max
1.9W, 2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.5 A @ Channel 1 or 7.8 A @ Channel 2
Power Dissipation
1900 mW @ Channel 1 or 2000 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14.5mohm
Rds(on) Test Voltage Vgs
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4916DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4916DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 956
Part Number:
SI4916DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
- 0.2
- 0.4
- 0.6
- 0.8
0.1
0.4
0.2
0.0
40
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
0.4
J
– Source-to-Drain Voltage (V)
T
Threshold Voltage
= 150 °C
J
– Temperature (°C)
25
0.6
50
I
D
0.8
= 250 µA
75
T
J
0.01
100
0.1
= 25 °C
1.0
10
1
100
0.1
Limited by R
* V
Limited
1.2
I
GS
D(on)
125
Single Pulse
T
>
C
V
= 25 °C
minimum V
DS
150
1.4
DS(on)
Safe Operating Area
1
Drain-to-Source Voltage (V)
*
GS
BVDSS Limited
at which R
DS(on)
120
100
10
0.05
0.04
0.03
0.02
0.01
0.00
80
60
40
20
0
0.001
I
is specified
0
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
0.01
V
2
100
GS
– Gate-to-Source Voltage (V)
4
Time (s)
I
0.1
D
Vishay Siliconix
= 7.5 A
6
Si4916DY
1
www.vishay.com
8
10
10
5

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