2N7002PS,115 NXP Semiconductors, 2N7002PS,115 Datasheet
2N7002PS,115
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2N7002PS,115 Summary of contents
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V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package 2N7002PS 4. Marking Table 4. Type number 2N7002PS [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). ...
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... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot Source-drain diode I S Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...
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... NXP Semiconductors (A) 1 −1 10 −2 10 −3 10 − single pulse DM = 100 μ °C ( 100 °C; drain mounting pad 1 cm (6) DC; T amb Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. ...
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... NXP Semiconductors 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0.33 0. 0.2 0.1 0.05 0. −3 − FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = 1 Z th(j-a) (K/W) 0 ...
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... NXP Semiconductors 7. Characteristics Table 7. ° Symbol Per transistor Static characteristics V (BR)DSS V GS(th) I DSS I GSS R DSon g fs Dynamic characteristics Q G(tot iss C oss C rss t d(on d(off Source-drain diode V SD [1] Pulse test: t 2N7002PS Product data sheet Characteristics C unless otherwise specified. Parameter Conditions drain-source breakdown ...
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... NXP Semiconductors 0 4 (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 1.0 2 °C T amb Fig 6. Per transistor: Output characteristics: drain current as a function of drain-source voltage; typical values 10.0 R DSon (Ω) (1) 7.5 5.0 2.5 0.0 0.0 0.2 0 °C T amb ( Fig 8. Per transistor: Drain-source on-state resistance as a function of drain current ...
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... NXP Semiconductors 1 (A) 0.8 0.6 0.4 0.2 (2) (1) 0.0 0.0 1.0 2.0 × > DSon = 25 °C (1) T amb = 150 °C (2) T amb Fig 10. Per transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values 3.0 V GS(th) (1) (V) 2.0 (2) (3) 1.0 0.0 − ...
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... NXP Semiconductors 5 (V) 4.0 3.0 2.0 1.0 0.0 0.0 0.2 0 300 mA Fig 14. Per transistor: Gate-source voltage as a function of gate charge; typical values 150 °C (1) T amb = 25 °C (2) T amb Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values 2N7002PS ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002PS Product data sheet P duty cycle δ ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.8 0.20 0.10 OUTLINE VERSION IEC SOT363 Fig 18. Package outline SOT363 (SC-88) 2N7002PS Product data sheet scale 2.2 1.35 2 ...
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... NXP Semiconductors 10. Soldering Fig 19. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 20. Wave soldering footprint SOT363 (SC-88) 2N7002PS Product data sheet 2.65 2.35 1.5 0.6 0.5 (4×) (4×) 0.5 (4×) 0.6 (4×) 1.8 1.3 1.3 2.45 5.3 All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002PS v.1 20100701 2N7002PS Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 2N7002PS 60 V, 320 mA N-channel Trench MOSFET ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13. Contact information For more information, please visit: For sales office addresses, please send an email to: ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Soldering ...