SH8K1TB1 Rohm Semiconductor, SH8K1TB1 Datasheet

SH8K1TB1

Manufacturer Part Number

SH8K1TB1

Description

MOSFET N-CH DUAL 30V 5A SOP8

Manufacturer

Rohm Semiconductor

Datasheet

1.SH8K1TB1.pdf (4 pages)

Specifications of SH8K1TB1

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

51 mOhm @ 5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

5.5nC @ 5V

Input Capacitance (ciss) @ Vds

230pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOP

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

58 mOhms

Forward Transconductance Gfs (max / Min)

3 S

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

5 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SH8K1TB1TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SH8K1TB1

Manufacturer:

ROHM

Quantity:

56 000

Current page: 1 of 4
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4V Drive Nch+Nch MOSFET

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small surface Mount Package (SOP8).

Application

Power switching, DC / DC converter.

Packaging specifications

Absolute maximum ratings (Ta=25C)

∗1 Pw 10μs, Duty cycle 1%

∗2 MOUNTED ON A CERAMIC BOARD.

Thermal resistance

∗MOUNTED ON A CERAMIC BOARD.

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body diode)

Total power dissipation

Channel temperature

Storage temperature

Channel to ambient

○

Type

SH8K1

www.rohm.com

SH8K1

Parameter

Package

Code

Basic ordering unit (pieces)

Continuous

Pulsed

Continuous

Pulsed

Taping

2500

Rth (ch-a)

Symbol

Tstg

Tch

DSS

GSS

∗1

∗2

−55 to +150

Limits

62.5

±5.0

150

±20

1.6

6.4

°C / W

1/3

Unit

°C

∗

Dimensions (Unit : mm)

Inner circuit

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

SOP8

(8)

(1)

∗1

(7)

(2)

∗2

(6)

(3)

∗1

(5)

(4)

Each lead has same dimensions

2009.12 - Rev.A

(1) (2) (3) (4)

(8) (7) (6) (5)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

Related parts for SH8K1TB1

SH8K1TB1 Summary of contents

Page 1

Drive Nch+Nch MOSFET SH8K1 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching converter. Packaging specifications Package Taping Type Code TB Basic ordering ...

Page 2

SH8K1 Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V 30 (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V 1.0 ...

Page 3

SH8K1 Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 =10V V DS Pulsed ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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