SP8K31TB1 Rohm Semiconductor, SP8K31TB1 Datasheet

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SP8K31TB1

Manufacturer Part Number
SP8K31TB1
Description
MOSFET 2N-CH 60V 3.5A 8SOIC
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SP8K31TB1

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
5.2nC @ 5V
Input Capacitance (ciss) @ Vds
250pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistor
4V Drive Nch+Nch MOSFET
SP8K31
Silicon N-channel
MOSFET
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Switching
<It is the same ratings for the Tr1 and Tr2.>
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Type
SP8K31
Structure
Features
Packaging dimensions
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
±3.5
±20
±14
150
1.0
2.0
60
14
Unit
∗A protection diode is included between the gate and
°C
°C
W
V
V
A
A
A
A
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
Dimensions (Unit : mm)
Equivalent circuit
SOP8
(8)
(1)
∗1
(7)
(2)
∗2
(6)
(3)
∗1
(5)
(4)
(1) (2) (3) (4)
(8) (7) (6) (5)
Each lead has same dimensions
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
SP8K31
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SP8K31TB1 Summary of contents

Page 1

Transistor 4V Drive Nch+Nch MOSFET SP8K31 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Applications Switching Packaging dimensions Package Taping Type Code Basic ordering unit (pieces) 2500 SP8K31 Absolute maximum ratings (Ta=25°C) ...

Page 2

Transistor Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static ...

Page 3

Transistor Electrical characteristic curves 100 =10V V DS Pulsed 10 Ta=125°C Ta=75°C Ta=25°C 1 Ta= −25°C 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 GATE-SOURCE VOLTAGE : V (V) GS Fig.1 Typical Transfer Characteristics 1000 = Pulsed ...

Page 4

Transistor 10 Ta=25°C =30V =3. =10Ω Pulsed TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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