SP8K31TB1 Rohm Semiconductor, SP8K31TB1 Datasheet
SP8K31TB1
Specifications of SP8K31TB1
Related parts for SP8K31TB1
SP8K31TB1 Summary of contents
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Transistor 4V Drive Nch+Nch MOSFET SP8K31 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Applications Switching Packaging dimensions Package Taping Type Code Basic ordering unit (pieces) 2500 SP8K31 Absolute maximum ratings (Ta=25°C) ...
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Transistor Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static ...
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Transistor Electrical characteristic curves 100 =10V V DS Pulsed 10 Ta=125°C Ta=75°C Ta=25°C 1 Ta= −25°C 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 GATE-SOURCE VOLTAGE : V (V) GS Fig.1 Typical Transfer Characteristics 1000 = Pulsed ...
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Transistor 10 Ta=25°C =30V =3. =10Ω Pulsed TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...