SP8K22FU6TB Rohm Semiconductor, SP8K22FU6TB Datasheet

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SP8K22FU6TB

Manufacturer Part Number
SP8K22FU6TB
Description
MOSFET N-CH DUAL 45V 4.5A 8SOIC
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SP8K22FU6TB

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
45V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
9.6nC @ 5V
Input Capacitance (ciss) @ Vds
550pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SP8K22FU6TB
Manufacturer:
ROHM
Quantity:
10 198
Transistor
4V Drive Nch+Nch MOSFET
SP8K22
Silicon N-channel
MOSFET
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Power switching , DC / DC converter , Inverter
<It is the same ratings for the Tr1 and Tr2.>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW ≤ 10µs、Duty cycle ≤ 1%
*2 Mounted on a ceramic board
Type
SP8K22
Structure
Features
Packaging dimensions
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
I
I
P
T
T
DP
SP
GSS
I
I
DSS
D
stg
D
S
ch
*1
*1
*2
-55 to +150
Limits
±4.5
±20
±18
150
1.4
45
18
1
2
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
∗2
Dimensions (Unit : mm)
SOP8
W / ELEMENT
(8)
(1)
W / TOTAL
∗1
1pin mark
(7)
(2)
Unit
o
o
∗2
A
V
V
A
A
A
C
C
(6)
(3)
1.27
∗1
( 8 )
( 1 )
0.4
(5)
(4)
5.0
(1) (2) (3) (4)
(8) (7) (6) (5)
( 5 )
( 4 )
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Each lead has same dimensions
Rev.B
1.75
0.2
SP8K22
1/4

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SP8K22FU6TB Summary of contents

Page 1

Transistor 4V Drive Nch+Nch MOSFET SP8K22 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Applications Power switching , converter , Inverter Packaging dimensions Package Taping Type Code Basic ordering ...

Page 2

Transistor Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static ...

Page 3

Transistor Electrical characteristic curves 10 V =10V DS pulsed 1 o Ta=125 C o           -25 C 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : V [V] GS Fig.1 Typical Transfer Characteristics ...

Page 4

Transistor Measurement circuits D.U. Fig.10 Switching Time Test Circuit (Const.) D.U. Fig.12 Gate Charge Test Circuit ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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