SH8M70TB1 Rohm Semiconductor, SH8M70TB1 Datasheet
SH8M70TB1
Specifications of SH8M70TB1
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SH8M70TB1 Summary of contents
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Drive Nch+Pch MOSFET SH8M70 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching converter. Packaging specifications Package Taping Type Code TB ...
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SH8M70 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V 250 (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V 2.0 GS (th) ∗ Static drain-source on-state R DS (on) ...
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SH8M70 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage I GSS −250 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −2.0 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) ...
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SH8M70 N-ch Electrical characteristic curves 1000 Ciss 100 Coss 10 f=1MHz V =0V GS Crss Ta=25°C Pulsed 1 0.01 0 100 1000 Drain-Source Voltage : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage Ta=25°C ...
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SH8M70 10 V =10V DS Pulsed 1 Ta=-25°C 25°C 0.1 75°C 75°C 0.01 0.01 0 Drain Current : I (A) D Fig.10 Forward Transfer Admittance vs. Drain Current P-ch Electrical characteristic curves 1000 Ciss 100 Coss 10 Crss ...
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SH8M70 10 Ta=125°C 1 75°C 25°C -25°C V =10V GS Pulsed 0.1 0 Drain Current : -I (A) D Fig.7 Static Drain-Source On-State Resistance vs. Drain Current 1000 100 Reverse Drain Current : ...
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SH8M70 N-ch Measurement circuit D.U. Fig.13 Switching Time Measurement Circuit (Const.) D.U. Fig.15 Gate ...
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