SP8K3FU6TB Rohm Semiconductor, SP8K3FU6TB Datasheet
SP8K3FU6TB
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SP8K3FU6TB Summary of contents
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Transistors Switching (30V, 7.0A) SP8K3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching converter. Structure Silicon N-channel MOS FET Absolute maximum ratings (Ta=25° the ...
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Transistors Electrical characteristics (Ta=25° the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS ...
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Transistors Electrical characteristic curves 10000 1MHz 1000 C iss C oss 100 C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 100 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...