IRF7507TRPBF International Rectifier, IRF7507TRPBF Datasheet

IRF7507TRPBF

Manufacturer Part Number

IRF7507TRPBF

Description

MOSFET N/P-CH 20V 1.7A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7507TRPBF.pdf (8 pages)

Specifications of IRF7507TRPBF

Package / Case

Micro8™

Mounting Type

Surface Mount

Power - Max

1.25W

Fet Type

N and P-Channel

Gate Charge (qg) @ Vgs

8nC @ 4.5V

Vgs(th) (max) @ Id

700mV @ 250µA

Current - Continuous Drain (id) @ 25° C

2.4A, 1.7A

Drain To Source Voltage (vdss)

20V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

140 mOhm @ 1.7A, 4.5V

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

140 mOhms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

2.4 A

Power Dissipation

1.25 W

Gate Charge Qg

5.3 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7507TRPBF

Manufacturer:

Quantity:

20 000

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Download datasheet (217Kb)

Description

Fifth

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is at

a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into

extremely thin application environments such as portable electronics and

PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

dv/dt

GSM

@ T

, T

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

Generation HEXFETs from International Rectifier utilize advanced

= 25°C

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µS

Parameter

G 2

G 1

S 2

S 1

N-C HANNE L M O S F E T

P -C HANNE L M O S F E T

T op V ie w

N-Channel

2.4

1.9

5.0

HEXFET

240 (1.6mm from case)

D 1

D 2

-55 to + 150

Max.

100

Max.

1.25

± 12

0.8

DS(on)

IRF7507

DSS

P-Channel

Power MOSFET

-1.7

-14

-5.0

-20

-1.4

M icro 8

0.135 0.27

PD - 91269I

N-Ch

20V

mW/°C

Units

°C/W

-20V

P-Ch

V/ns

°C

12/1/98

Related parts for IRF7507TRPBF

IRF7507TRPBF Summary of contents

Page 1

... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7507 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

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IRF7507TRPBF International Rectifier, IRF7507TRPBF Datasheet

IRF7507TRPBF

Specifications of IRF7507TRPBF

Available stocks

Related parts for IRF7507TRPBF

IRF7507TRPBF Summary of contents

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