IRF7507TRPBF

Manufacturer Part NumberIRF7507TRPBF
DescriptionMOSFET N/P-CH 20V 1.7A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7507TRPBF datasheet
 


Specifications of IRF7507TRPBF

Package / CaseMicro8™Mounting TypeSurface Mount
Power - Max1.25WFet TypeN and P-Channel
Gate Charge (qg) @ Vgs8nC @ 4.5VVgs(th) (max) @ Id700mV @ 250µA
Current - Continuous Drain (id) @ 25° C2.4A, 1.7ADrain To Source Voltage (vdss)20V
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs140 mOhm @ 1.7A, 4.5V
Transistor PolarityN and P-ChannelResistance Drain-source Rds (on)140 mOhms
Drain-source Breakdown Voltage20 VGate-source Breakdown Voltage12 V
Continuous Drain Current2.4 APower Dissipation1.25 W
Gate Charge Qg5.3 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
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Next
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth
Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
V
Gate-to-Source Voltage Single Pulse tp<10µS
GSM
dv/dt
Peak Diode Recovery dv/dt
T
, T
Junction and Storage Temperature Range
J
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
N-C HANNE L M O S F E T
1
8
D 1
S 1
2
7
G 1
D 1
3
6
S 2
D 2
4
5
G 2
D 2
P -C HANNE L M O S F E T
T op V ie w
N-Channel
20
2.4
GS
1.9
GS
19
5.0
-55 to + 150
240 (1.6mm from case)
PD - 91269I
IRF7507
®
Power MOSFET
N-Ch
P-Ch
V
20V
-20V
DSS
R
0.135 0.27
DS(on)
M icro 8
Max.
Units
P-Channel
-20
V
-1.7
-1.4
A
-14
1.25
W
0.8
W
10
mW/°C
± 12
V
16
V
-5.0
V/ns
°C
Max.
Units
100
°C/W
1
12/1/98

IRF7507TRPBF Summary of contents

  • Page 1

    ... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

  • Page 2

    IRF7507 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

  • Page 3

    VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µ 25°C J 0.01 0 rain-to-S ourc e V oltage ...

  • Page 4

    IRF7507 0.13 0. 0.07 0. ate-to-S ource V oltage ( Fig 7. Typical On-Resistance Vs. Gate Voltage 500 ...

  • Page 5

    VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2. BOTTOM - 1.5V 1 0.1 -1.5V 20µ 25°C J 0.01 ...

  • Page 6

    IRF7507 0.300 0.250 ID = -1.7A 0.200 0.150 0.100 Gate-to-Source Voltage (V) GS Fig 17. Typical On-Resistance Vs. Gate Voltage 500 ...

  • Page 7

    Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.08 ...

  • Page 8

    IRF7507 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & E ...