IRF7507TRPBF International Rectifier, IRF7507TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7507TRPBF
• Description: MOSFET N/P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7507TRPBF

• Package / Case: Micro8™
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.4A, 1.7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 140 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7507
Fig 17. Typical On-Resistance Vs. Gate
6
Fig 19. Typical Capacitance Vs.
0.300
0.250
0.200
0.150
0.100
500
400
300
200
100
0
1
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2
C
C
C
-V
is s
o s s
rs s
-V
3
D S
GS
V
C
C
C
, D rain-to-S ource V oltage (V )
G S
iss
rs s
oss
, Gate-to-Source Voltage (V)
1000
100
0.1
10
0.00001
4
= 0 V ,
= C
= C
= C
1
Voltage
D = 0.50
gs
g d
ds
0.20
0.10
0.05
0.02
0.01
+ C
+ C
ID = -1.7A
10
5
gd
gd
f = 1 M H z
, C
6
(THERMAL RESPONSE)
0.0001
ds
SINGLE PULSE
S H O R TE D
7
8
100
0.001
A
t , Rectangular Pulse Duration (sec)
1
N-P - Channel
P - Channel
0.01
0.1
Fig 18. Maximum Safe Operating Area
100
0.1
1 0
10
1. Duty factor D = t / t
2. Peak T = P
8
6
4
2
0
Notes:
1
Fig 20. Typical Gate Charge Vs.
0
1
T
T
Single Pulse
I
V
D
C
J
D S
= 25 C
= 150 C
= -1.2A
1
J
= -16V
-V
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
DS
°
Q , Total G ate C h arge (nC )
DM
2
°
G
, Drain-to-Source Voltage (V)
x Z
1
thJA
P
2
DM
4
BY R
+ T
10
A
t
1
10
DS(on)
t
2
FOR TES T C IR C U IT
6
SE E FIG U R E 19
100us
1ms
10ms
100
www.irf.com
8
100
1 0
A