IRF7341TRPBF International Rectifier, IRF7341TRPBF Datasheet

IRF7341TRPBF

Manufacturer Part Number

IRF7341TRPBF

Description

MOSFET 2N-CH 55V 4.7A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7341TRPBF.pdf (7 pages)

Specifications of IRF7341TRPBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

50 mOhm @ 4.7A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

4.7A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

36nC @ 10V

Input Capacitance (ciss) @ Vds

740pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

65 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

4.7 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Gate Charge Qg

24 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7341PBFTR

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

dv/dt

GSM

θJA

@ T

Generation V Technology

Ultra Low On-Resistance

Dual N-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy‚

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Parameter

…

@ 10V

Top View

Typ.

–––

HEXFET

-55 to + 150

IRF7341PbF

Max.

0.016

± 20

4.7

3.8

2.0

1.3

5.0

SO-8

DS(on)

Power MOSFET

Max.

62.5

DSS

= 0.050Ω

= 55V

PD -95199

Units

W/°C

°C/W

V/ns

°C

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IRF7341TRPBF Summary of contents

Page 1

... Fast Switching l Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7341PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 4

IRF7341PbF 2.5 4. 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.12 0.10 0. 4.7A D 0.06 0.04 0 ...

Page 5

1MHz iss rss gd 1000 oss iss 800 600 400 C oss 200 C ...

Page 6

IRF7341PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER ...

Page 7

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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