IRF7341PBF International Rectifier, IRF7341PBF Datasheet

MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341PBF

Manufacturer Part Number
IRF7341PBF
Description
MOSFET 2N-CH 55V 4.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7341PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
4.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
13 ns
Gate Charge Qg
24 nC
Minimum Operating Temperature
- 55 C
Rise Time
3.2 ns
Module Configuration
Dual
Continuous Drain Current Id
4.7A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7341PBF
Manufacturer:
IR
Quantity:
25
Part Number:
IRF7341PBF
Manufacturer:
IR
Quantity:
20 000
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
l
www.irf.com
R
V
I
I
I
P
P
V
V
E
dv/dt
T
D
D
DM
J,
DS
D
D
GS
GSM
AS
θJA
@ T
@ T
@T
@T
T
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
1
2
3
4
Top View
Typ.
–––
HEXFET
8
6
5
7
-55 to + 150
IRF7341PbF
Max.
0.016
D1
D1
D2
D2
± 20
4.7
3.8
2.0
1.3
5.0
30
55
38
72
SO-8
®
R
DS(on)
Power MOSFET
V
Max.
62.5
DSS
= 0.050Ω
= 55V
PD -95199
Units
Units
W/°C
°C/W
V/ns
°C
V
A
V
V
1

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IRF7341PBF Summary of contents

Page 1

... V Gate-to-Source Voltage GS V Gate-to-Source Voltage Single Pulse tp<10µs GSM E Single Pulse Avalanche Energy‚ AS dv/dt Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7341PbF HEXFET Top View Max. @ 10V GS @ 10V GS 0 ...

Page 2

... IRF7341PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge gd t Turn-On Delay Time ...

Page 3

... T = 150 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS www.irf.com 100 TOP BOTTOM 10 ° 100 0.1 100 10 ° 25V 0 0.2 IRF7341PbF VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V 3.0V 3.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 150 C ° ° 0.5 ...

Page 4

... IRF7341PbF 2.5 4. 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.12 0.10 0. 4.7A D 0.06 0. Gate-to-Source Voltage ( 0.120 0.100 0.080 0.060 V = 10V GS 0.040 0 ° 200 160 120 Starting T , Junction Temperature ( C) VGS = 4.5V VGS = 10V Drain Current ( TOP 2 ...

Page 5

... C oss 200 C rss Drain-to-Source Voltage (V) DS 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com SHORTED 100 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7341PbF 4. 48V 30V 12V Total Gate Charge (nC Notes: 1. Duty factor Peak thJA 100 5 ...

Page 6

... IRF7341PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. ...

Page 7

... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.11/04 IRF7341PbF 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12 ...

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