IRF7752TRPBF

Manufacturer Part NumberIRF7752TRPBF
DescriptionMOSFET N-CH DUAL 30V 4.6A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7752TRPBF datasheet
 

Specifications of IRF7752TRPBF

Package / Case8-TSSOPMounting TypeSurface Mount
Power - Max1WFet Type2 N-Channel (Dual)
Gate Charge (qg) @ Vgs9nC @ 4.5VVgs(th) (max) @ Id2V @ 250µA
Current - Continuous Drain (id) @ 25° C4.6ADrain To Source Voltage (vdss)30V
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs30 mOhm @ 4.6A, 10V
ConfigurationDualTransistor PolarityDual N-Channel
Resistance Drain-source Rds (on)36 mOhmsDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage12 VContinuous Drain Current4.6 A
Power Dissipation1 WMounting StyleSMD/SMT
Gate Charge Qg9 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
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Ultra Low On-Resistance
l
l
Dual N-Channel MOSFET
Very Small SOIC Package
l
l
Low Profile (< 1.1mm)
Available in Tape & Reel
l
Description
®
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
provides thedesigner
national Rectifier is well known for,
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 70°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
V
R
DSS
DS(on)
30V
0.030@V
0.036@V
1
8
2
7
3
6
4
5
1 = D1
8 = D2
2 = S 1
7 = S 2
3 = S 1
6 = S 2
4 = G1
5 = G2
Max.
@ 10V
±4.6
GS
@ 10V
±3.7
GS
0.64
-55 to + 150
Max.
ƒ
125
PD -94030A
IRF7752
®
Power MOSFET
max
I
D
= 10V
4.6A
GS
= 4.5V
3.9A
GS
TSSOP-8
Units
30
V
A
±37
1.0
W
8.0
mW/°C
± 12
V
°C
Units
°C/W
1
3/25/01

IRF7752TRPBF Summary of contents

  • Page 1

    ... Low Profile (< 1.1mm) Available in Tape & Reel l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for use in battery and load management ...

  • Page 2

    IRF7752 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.01 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T = 150 C ° ° J ...

  • Page 4

    IRF7752 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 600 C oss 400 ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

  • Page 6

    IRF7752 0.080 0.060 0.040 4.6A 0.020 0.000 2.0 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge ...

  • Page 7

    TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can ...