IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7752TRPBF
• Description: MOSFET N-CH DUAL 30V 4.6A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7752TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
1
°
0.01
150
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
0.1
DS
GS
R
Pulse Width
Duty Factor
G
10V
V
t
d(on)
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
V
DS
t
r
1
µs
J
DM
x Z
D.U.T.
1
thJA
R
P
2
DM
D
t
IRF7752
+ T
d(off)
10
A
t
1
t
t
f
2
+
-
V
DD
100
5