IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 6

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IRF7752TRPBF

Manufacturer Part Number
IRF7752TRPBF
Description
MOSFET N-CH DUAL 30V 4.6A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7752TRPBF

Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Vgs(th) (max) @ Id
2V @ 250µA
Current - Continuous Drain (id) @ 25° C
4.6A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.6A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
36 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.6 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7752TRPBF
Manufacturer:
MAXIM
Quantity:
1 001
Part Number:
IRF7752TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7752
6
10 V
0.080
0.060
0.040
0.020
0.000
Fig 11. Typical On-Resistance Vs.
Fig 13a. Basic Gate Charge Waveform
V
2.0
G
Q
3.0
GS
V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Q
Charge
Q
5.0
GD
G
6.0
I D = 4.6A
7.0
8.0
9.0
10.0
0.030
0.025
0.020
Fig 12. Typical On-Resistance Vs.
Fig 13b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
5
Current Regulator
.2 F
VGS = 4.5V
10
Drain Current
I D , Drain Current ( A )
50K
3mA
Current Sampling Resistors
.3 F
15
I
G
20
D.U.T.
VGS = 10V
I
D
25
www.irf.com
+
-
V
30
DS
35
40

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