IRF7755TRPBF International Rectifier, IRF7755TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7755TRPBF
• Description: MOSFET P-CH DUAL 20V 3.9A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7755TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 P-Channel (Dual)
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.9 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7755
4
1600
1200
100
800
400
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.2
1
Drain-to-Source Voltage
-V
T = 150 C
0.4
-V
J
SD
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C
C
C
°
0.6
iss
oss
rss
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.8
+ C
+ C
10
f = 1MHz
gd ,
gd
T = 25 C
1.0
J
C
ds
V
SHORTED
°
GS
1.2
= 0 V
1.4
100
100
10
0.1
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
-3.7A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
Q , Total Gate Charge (nC)
4
°
G
°
, Drain-to-Source Voltage (V)
1
8
BY R
DS(on)
12
V
www.irf.com
10
DS
=-16V
16
100us
1ms
10ms
100
20