IRF7755TRPBF International Rectifier, IRF7755TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7755TRPBF
• Description: MOSFET P-CH DUAL 20V 3.9A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7755TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 P-Channel (Dual)
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.9 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7755
6
10 V
0.160
0.120
0.080
0.040
0.000
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
V
2.0
G
Q
GS
3.0
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Charge
Q
Q
GD
G
I D = -3.7A
5.0
6.0
7.0
8.0
0.200
0.150
0.100
0.050
0.000
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2 F
Drain Current
-I D , Drain Current ( A )
VGS = -2.5V
50K
-3mA
5
Current Sampling Resistors
.3 F
I
G
D.U.T.
www.irf.com
VGS = -4.5V
10
I
D
+
-
V
DS
15