IRF7752GTRPBF International Rectifier, IRF7752GTRPBF Datasheet

IRF7752GTRPBF

Manufacturer Part Number

IRF7752GTRPBF

Description

MOSFET N-CH DUAL 30V 4.6A 8TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7752GTRPBF.pdf (8 pages)

Specifications of IRF7752GTRPBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 4.6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.6A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

9nC @ 4.5V

Input Capacitance (ciss) @ Vds

861pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

36 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

4.6 A

Power Dissipation

1 W

Mounting Style

SMD/SMT

Gate Charge Qg

9 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7752GTRPBFTR

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Description

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design , that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for use

in battery and load management.

The TSSOP-8 package, has 45% less footprint area of the

standard SO-8. This makes the TSSOP-8 an ideal device

for applications where printed circuit board space is at a

premium.

The low profile (<1.1mm) of the TSSOP-8 will allow it to fit

easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

θJA

@ T

Dual N-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.1mm)

Available in Tape & Reel

Lead-Free

Halogen-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

power MOSFETs from International Rectifier

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

provides thedesigner

@ 10V

!Ã2ÃT

"Ã2ÃT

Ã2Ã9

Ã2ÃB

30V

DSS

IRF7752GPbF

HEXFET

$Ã2ÃB!

'Ã2Ã9!

&Ã2ÃT!

%Ã2ÃT!

0.036@V

0.030@V

-55 to + 150

Max.

125

DS(on)

0.64

± 12

4.6

3.7

1.0

8.0

Power MOSFET

max

= 4.5V

= 10V

TSSOP-8

PD- 96151A

4.6A

3.9A

mW/°C

Units

05/14/09

°C/W

°C

Related parts for IRF7752GTRPBF

IRF7752GTRPBF Summary of contents

Page 1

... Halogen-Free l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management ...

Page 2

IRF7752GPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° J ...

Page 4

IRF7752GPbF 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 600 C oss 400 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

IRF7752GPbF 0.080 0.060 0.040 4.6A 0.020 0.000 2.0 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. ...

Page 7

TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB ...

Page 8

IRF7752GPbF @Y6H G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'Ã€€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 6SUÃIVH7@S 96U@Ã8P9@Ã`XX 6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… Ã "Å %Ã€€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$# ...

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