IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7757TRPBF
• Description: MOSFET 2N-CH 20V 4.8A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7757TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1.2 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics
IRF7757PbF
Electrical Characteristics @ T
Notes:

‚
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤
2
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
0.60 –––
––– 0.013 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1340 –––
–––
–––
–––
–––
–––
Surface mounted on 1 in square Cu board
20
11
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
180
132
2.5
4.8
9.5
9.2
20
10
15
36
14
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.2
1.2
1.0
25
23
1.2
35
40
30
15
19
V/°C
mΩ
nC
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ‚
showing the
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 4.8A
= 1.0A
= 25°C, I
= 25°C, I
= 6.2Ω
= V
= 10V, I
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.5V, I
= 12V
= -12V
= 4.5V
= 10V ‚
= 4.5V
= 0V
GS
Conditions
, I
D
S
F
D
D
Conditions
= 250µA
D
D
GS
GS
= 1.2A, V
= 1.2A
= 250µA
= 4.8A
= 4.8A ‚
= 3.8A ‚
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 70°C
= 0V ‚
G
D
S