IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7757TRPBF
• Description: MOSFET 2N-CH 20V 4.8A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7757TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1.2 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7757PbF
10000
100.00
1000
4
10.00
100
1.00
0.10
Fig 7. Typical Source-Drain Diode
1
0.1
Fig 5. Typical Capacitance Vs.
T J = 150°C
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.5
Forward Voltage
Crss
Coss
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
Ciss
0.9
T J = 25°C
10
1.2
f = 1 MHZ
V GS = 0V
1.6
SHORTED
2.0
100
100
0.1
10
1
Fig 8. Maximum Safe Operating Area
5
4
3
2
1
0
0
Tc = 25°C
Tj = 150°C
Single Pulse
0
I =
Fig 6. Typical Gate Charge Vs.
D
V DS , Drain-toSource Voltage (V)
4.8A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
4
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V
V
DS
DS
8
= 16V
= 10V
12
10
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100µsec
10msec
1msec
16
100
20