IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7757TRPBF
• Description: MOSFET 2N-CH 20V 4.8A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7757TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1.2 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7757PbF
Fig 12. Typical On-Resistance Vs. Gate
6
0.05
0.04
0.03
0.02
V
Fig 14a. Basic Gate Charge Waveform
GS
2.0
V
G
V GS, Gate -to -Source Voltage (V)
3.0
Q
GS
Voltage
4.0
I D = 4.8A
Charge
Q
Q
5.0
GD
G
6.0
7.0
8.0
0.050
0.040
0.030
0.020
Fig 13. Typical On-Resistance Vs. Drain
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
V GS = 2.5V
5
I D , Drain Current (A)
50KΩ
3mA
Current
Current Sampling Resistors
.3µF
I
G
10
V GS = 4.5V
D.U.T.
www.irf.com
I
D
15
+
-
V
DS
20