IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet - Page 7

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IRF7757TRPBF

Manufacturer Part Number
IRF7757TRPBF
Description
MOSFET 2N-CH 20V 4.8A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7757TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1340pF @ 15V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.8 A
Power Dissipation
1.2 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
1.3
1.1
0.9
0.7
0.5
0.3
Fig 15. Typical Threshold Voltage Vs.
-75
-50
Junction Temperature
-25
T J , Temperature ( °C )
0
I D = 250µA
25
50
75
100
125
150
120
110
100
90
80
70
60
50
40
30
20
10
0
1.00
Fig 16. Typical Power Vs. Time
10.00
Time (sec)
IRF7757PbF
100.00
1000.00
7

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