IRF7910PBF International Rectifier, IRF7910PBF Datasheet

IRF7910PBF
Manufacturer Part Number	IRF7910PBF
Description	MOSFET N-CH 12V 10A 8-SOIC
Manufacturer	International Rectifier
Series	HEXFET®
IRF7910PBF datasheets	1. IRF7910PBF.pdf (8 pages)

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Specifications of IRF7910PBF
Fet Type	2 N-Channel (Dual)	Fet Feature	Logic Level Gate
Rds On (max) @ Id, Vgs	15 mOhm @ 8A, 4.5V	Drain To Source Voltage (vdss)	12V
Current - Continuous Drain (id) @ 25° C	10A	Vgs(th) (max) @ Id	2V @ 250µA
Gate Charge (qg) @ Vgs	26nC @ 4.5V	Input Capacitance (ciss) @ Vds	1730pF @ 6V
Power - Max	2W	Mounting Type	Surface Mount
Package / Case	8-SOIC (3.9mm Width)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant

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Applications

High Frequency 3.3V and 5V input Point-

of-Load Synchronous Buck Converters for

Netcom and Computing Applications

Power Management for Netcom,

Computing and Portable Applications

Lead-Free

Benefits

Ultra-Low Gate Impedance

Very Low R

DS(on)

Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ T

= 70°C

Continuous Drain Current, V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

= 70°C

Maximum Power Dissipation

Linear Derating Factor

, T

Junction and Storage Temperature Range

STG

Thermal Resistance

Symbol

Parameter

Junction-to-Drain Lead

θJL

Junction-to-Ambient

θJA

Notes through

are on page 8

„

www.irf.com

DSS

12V

Top View

@ 4.5V

„

Typ.

–––

„

–––

IRF7910PbF

HEXFET

Power MOSFET

max

DS(on)

15mΩ @V

= 4.5V

10A

SO-8

Max.

Units

± 12

7.9

2.0

1.3

mW/°C

-55 to + 150

°C

Max.

Units

°C/W

62.5

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IRF7910PBF Summary of contents
Page 1 ... Junction-to-Ambient θJA Notes through are on page 8 „ www.irf.com V DSS 12V Top View @ 4. 4.5V GS „ „ Typ. ––– „ ––– IRF7910PbF ® HEXFET Power MOSFET R max I DS(on) D 15mΩ 4.5V 10A SO-8 Max. Units 12 V ± ... Page 2 ... IRF7910PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ... Page 3 ... Fig 3. Typical Transfer Characteristics www.irf.com 1000 100 10 1 0.1 0.1 10 Fig 2. Typical Output Characteristics 2.0 10A 1.5 1.0 0.5 0.0 3.0 4.0 -60 -40 Fig 4. Normalized On-Resistance IRF7910PbF 1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 4. 100 120 140 Vs. Temperature 10 160 3 ... Page 4 ... IRF7910PbF 10000 0V MHZ C iss = SHORTED C rss = oss = Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150°C 10 25°C 1.0 0.1 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 8. 100 Fig 6. Typical Gate Charge Vs. ... Page 5 ... RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7910PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ... Page 6 ... IRF7910PbF 0.0145 0.0140 0.0135 4.5V 0.0130 0.0125 0.0120 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V ... Page 7 ... PPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "YÃ !&Ãb$d 96U@Ã8P9@Ã`XX `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F ;;;; 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ GPBP IRF7910PbF DI8C@T HDGGDH@U@ST HDI H6Y HDI H6Y $"! %'' "$ &$ # (' ... Page 8 ... IRF7910PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: ...

IRF7910PBF Summary of contents

Page 1
... Junction-to-Ambient θJA Notes through are on page 8 „ www.irf.com V DSS 12V Top View @ 4. 4.5V GS „ „ Typ. ––– „ ––– IRF7910PbF ® HEXFET Power MOSFET R max I DS(on) D 15mΩ 4.5V 10A SO-8 Max. Units 12 V ± ...
Page 2
... IRF7910PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...
Page 3
... Fig 3. Typical Transfer Characteristics www.irf.com 1000 100 10 1 0.1 0.1 10 Fig 2. Typical Output Characteristics 2.0 10A 1.5 1.0 0.5 0.0 3.0 4.0 -60 -40 Fig 4. Normalized On-Resistance IRF7910PbF 1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 4. 100 120 140 Vs. Temperature 10 160 3 ...
Page 4
... IRF7910PbF 10000 0V MHZ C iss = SHORTED C rss = oss = Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150°C 10 25°C 1.0 0.1 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 8. 100 Fig 6. Typical Gate Charge Vs. ...
Page 5
... RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7910PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...
Page 6
... IRF7910PbF 0.0145 0.0140 0.0135 4.5V 0.0130 0.0125 0.0120 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V ...
Page 7
... PPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "YÃ !&Ãb$d 96U@Ã8P9@Ã`XX `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F ;;;; 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ GPBP IRF7910PbF DI8C@T HDGGDH@U@ST HDI H6Y HDI H6Y $"! %'' "$ &$ # (' ...
Page 8
... IRF7910PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: ...

IRF7910PBF

IRF7910PBF

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IRF7910PBF Summary of contents

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