Ultra Low On-Resistance
l
Dual P-Channel MOSFET
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Very Small SOIC Package
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Low Profile ( < 1.1mm)
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Available in Tape & Reel
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Lead-Free
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Description
®
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
provides the designer
tional Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
IRF7750PbF
HEXFET
V
DSS
R
DS(on)
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Max.
@ -4.5V
±4.7
GS
@ -4.5V
±3.8
GS
0.64
0.008
-55 to + 150
Max.
125
PD-96019A
®
Power MOSFET
= -20V
= 0.030Ω
TSSOP-8
Units
-20
V
A
±38
1.0
W/°C
± 12
V
°C
Units
°C/W
1
05/14/09