MOSFET P-CH DUAL 20V 4.7A 8TSSOP

IRF7750TRPBF

Manufacturer Part NumberIRF7750TRPBF
DescriptionMOSFET P-CH DUAL 20V 4.7A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7750TRPBF datasheet
 

Specifications of IRF7750TRPBF

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs30 mOhm @ 4.7A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C4.7AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs39nC @ 5VInput Capacitance (ciss) @ Vds1700pF @ 15V
Power - Max1WMounting TypeSurface Mount
Package / Case8-TSSOPConfigurationDual
Transistor PolarityDual P-ChannelDrain-source Breakdown Voltage- 20 V
Gate-source Breakdown Voltage12 VContinuous Drain Current- 4.7 A
Power Dissipation1 WMounting StyleSMD/SMT
Gate Charge Qg26 nCModule ConfigurationDual
Continuous Drain Current Id4.7ADrain Source Voltage Vds-20V
On Resistance Rds(on)30mohmRds(on) Test Voltage Vgs-4.5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIRF7750TRPBF
IRF7750TRPBFTR		  
show all specifications
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Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile ( < 1.1mm)
l
Available in Tape & Reel
l
Lead-Free
l
Description
®
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
provides the designer
tional Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
IRF7750PbF
HEXFET
V
DSS
R
DS(on)
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Max.
@ -4.5V
±4.7
GS
@ -4.5V
±3.8
GS
0.64
0.008
-55 to + 150
Max.
ƒ
125
PD-96019A
®
Power MOSFET
= -20V
= 0.030Ω
TSSOP-8
Units
-20
V
A
±38
1.0
W/°C
± 12
V
°C
Units
°C/W
1
05/14/09

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IRF7750TRPBF Summary of contents

  • Page 1

    ... Lead-Free l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Interna- provides the designer tional Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

  • Page 2

    Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

  • Page 3

    VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V 100 -2.00V BOTTOM -1.50V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

  • Page 4

    1MHz iss rss 2000 oss iss 1500 1000 500 C oss ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

  • Page 6

    1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J Fig 12. Normalized On-Resistance Vs. Temperature 0.08 0.06 0.04 0.02 0.00 2.0 ...

  • Page 7

    TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB ...

  • Page 8

    G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'À€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… à "Å %À€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$#  Data ...

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