IRF7750TRPBF International Rectifier, IRF7750TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7750TRPBF
• Description: MOSFET P-CH DUAL 20V 4.7A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7750TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.7 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Module Configuration: Dual
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7750TRPBF; IRF7750TRPBFTR

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature.
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t<10 sec
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1700 –––
–––
–––
–––
––– 0.012 –––
–––
-20
11
–––
–––
––– 0.030
––– 0.055
–––
–––
–––
–––
180
380
270
––– -100
210
3.9
8.0
26
16
26
15
54
-1.2
–––
-1.2
–––
-1.0
100
–––
–––
–––
–––
–––
–––
-38
-25
5.8
-1.0
39
24
39
12
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
Ω
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -4.7A
= -1.0A
= 25°C, I
= 25°C, I
= 10Ω
= 24Ω ‚
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -20V, V
= -16V, V
= -12V
= 12V
= -16V
= -5.0V‚
= -10V
= 0V
= -15V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
= -1.0A, V
= -1.0A
D
D
GS
GS
= -250µA
= -4.7A
‚
= -4.7A ‚
= -3.8A ‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
D
S