IRF7750TRPBF International Rectifier, IRF7750TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7750TRPBF
• Description: MOSFET P-CH DUAL 20V 4.7A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7750TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.7 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Module Configuration: Dual
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7750TRPBF; IRF7750TRPBFTR

Fig 7. Threshold Voltage Vs. Temperature
4
2500
2000
1500
1000
1.00
0.80
0.60
0.40
0.20
500
0
-75
1
Fig 5. Typical Capacitance Vs.
-50
-V
Drain-to-Source Voltage
DS
-25
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T J , Temperature ( °C )
=
=
=
=
0
0V,
C
C
C
gs
gd
ds
25
C iss
C oss
C rss
+ C
+ C
10
f = 1MHz
gd ,
gd
50
I D = -250µA
C
ds
75
SHORTED
100 125 150
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
I =
D
A
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-4.7A
-V
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
1
BY R
20
DS(on)
V
DS
=-16V
10
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30
10us
100us
1ms
10ms
100
40