IRF7750TRPBF International Rectifier, IRF7750TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7750TRPBF
• Description: MOSFET P-CH DUAL 20V 4.7A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7750TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.7 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Module Configuration: Dual
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7750TRPBF; IRF7750TRPBFTR

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Fig 12. Normalized On-Resistance
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
I =
D
-4.7A
Vs. Temperature
T , Junction Temperature ( C)
J
0
20 40 60
Fig 14. Typical On-Resistance Vs. Gate
0.08
0.06
0.04
0.02
0.00
2.0
80 100 120 140 160
-V GS, Gate -to -Source Voltage (V)
V
°
GS
=
-4.5V
Voltage
2.5
I D = -4.7A
Fig 13. Typical On-Resistance Vs. Drain
0.08
0.06
0.04
0.02
0.00
3.0
0
V GS = -2.5V
10
3.5
-I D , Drain Current (A)
Current
20
V GS = -4.5V
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