IRF7754TRPBF International Rectifier, IRF7754TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7754TRPBF
• Description: MOSFET P-CH DUAL 12V 5.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7754TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 P-Channel (Dual)
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7754
4
3200
2800
2400
2000
1600
1200
100
0.1
800
400
10
1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
Coss
Ciss
Crss

-V
T = 150 C
J
-V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.4
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
°
0.6
10
f = 1 MHZ


0.8
T = 25 C
V
J
GS
= 0 V
°
1.0
100
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0.1
0

I =
Fig 6. Typical Gate Charge Vs.

D
Single Pulse
T
T
C
J
= 25 C °
= 150 C

-5.4A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
5
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
10
1
BY R
15
DS(on)

V
V
DS
DS
www.irf.com
=-9.6V
=-6V
20
10

1 ms

1 0ms
25
100
30