STS1DNC45 STMicroelectronics, STS1DNC45 Datasheet

MOSFET N-CHAN 450V 0.4A 8-SOIC

STS1DNC45

Manufacturer Part Number
STS1DNC45
Description
MOSFET N-CHAN 450V 0.4A 8-SOIC
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STS1DNC45

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
June 2003
STS1DNC45
TYPICAL R
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
GATE CHARGE MINIMIZED
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
DC-DC CONVERTERS
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
LOW POWER BATTERY CHARGERS
Symbol
dv/dt(1)
I
V
DM
P
TYPE
V
V
DGR
TOT
I
DS
GS
D
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Total Dissipation at T
Peak Diode Recovery voltage slope
DS
450 V
V
(on) = 4.1
DSS
R
< 4.5
DS(on)
DUAL N-CHANNEL 450V - 4.1 - 0.4A SO-8
C
C
GS
Parameter
= 25°C Dual Operation
= 25°C Single Operation
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
0.4 A
I
D
SuperMESH™ POWER MOSFET
(1)I
SD
0.4 A, di/dt 100A/µs, V
INTERNAL SCHEMATIC DIAGRAM
SO-8
Value
± 30
0.40
0.25
STS1DNC45
450
450
1.6
1.6
DD
2
3
V
(BR)DSS
, T
j
T
JMAX.
Unit
V/ns
W
W
V
V
V
A
A
A
1/8

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STS1DNC45 Summary of contents

Page 1

... DUAL N-CHANNEL 450V - 4.1 - 0.4A SO-8 SuperMESH™ POWER MOSFET I D 0.4 A Parameter = 25° 100° 25°C Dual Operation C = 25°C Single Operation C (1)I SD STS1DNC45 SO-8 INTERNAL SCHEMATIC DIAGRAM Value 450 450 ± 30 0.40 0.25 1.6 1 0.4 A, di/dt 100A/µ (BR)DSS Unit V ...

Page 2

... STS1DNC45 THERMAL DATA Rthj-amb(#) Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operation T Max. Operating Junction Temperature j T Storage Temperature stg (#) When Mounted on FR4 board (Steady State) AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... Test Conditions V = 360 1 4 (see test circuit, Figure 5) Test Conditions 0.4 A, di/dt = 100A/µ 100 150° (see test circuit, Figure 5) Thermal Impedance STS1DNC45 Min. Typ. Max. Unit 6 1.3 nC 3.2 Min. Typ. Max. Unit 8 Min. Typ. Max. Unit 0 ...

Page 4

... STS1DNC45 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Max Id Current vs Tc Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature STS1DNC45 5/8 ...

Page 6

... STS1DNC45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STS1DNC45 MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 0016023 7/8 ...

Page 8

... STS1DNC45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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