IRF7754GTRPBF International Rectifier, IRF7754GTRPBF Datasheet
IRF7754GTRPBF
Specifications of IRF7754GTRPBF
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IRF7754GTRPBF Summary of contents
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... HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for management. ...
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IRF7754GPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ...
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IRF7754GPbF 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE ...
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IRF7754GPbF 0.070 0.060 0.050 0.040 -5.5A 0.030 0.020 0.010 0.0 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 ...
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IRF7754GPbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB H@ UT ...
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G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'À€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 6SUÃIVH7@S 96U@Ã8P9@Ã`XX 6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… à "Å %À€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$# Data ...