MOSFET P-CH DUAL 12V 5.5A 8TSSOP

IRF7754GTRPBF

Manufacturer Part NumberIRF7754GTRPBF
DescriptionMOSFET P-CH DUAL 12V 5.5A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7754GTRPBF datasheet
 


Specifications of IRF7754GTRPBF

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs25 mOhm @ 5.4A, 4.5VDrain To Source Voltage (vdss)12V
Current - Continuous Drain (id) @ 25° C5.5AVgs(th) (max) @ Id900mV @ 250µA
Gate Charge (qg) @ Vgs22nC @ 4.5VInput Capacitance (ciss) @ Vds1984pF @ 6V
Power - Max1WMounting TypeSurface Mount
Package / Case8-TSSOPConfigurationDual
Transistor PolarityDual P-ChannelDrain-source Breakdown Voltage- 12 V
Gate-source Breakdown Voltage8 VContinuous Drain Current- 5.5 A
Power Dissipation1 WMounting StyleSMD/SMT
Gate Charge Qg22 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIRF7754GTRPBFTR  
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Ultra Low On-Resistance
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
l
Lead-Free
l
Halogen-Free
l
Description
®
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the ruggedized device design, that International Rectifier
is well known for,
provides thedesigner with an extremely
efficient and reliable device for
management.
The TSSOP-8 package has 45% less footprint area than the
standard SO-8. This makes the TSSOP-8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.2mm) allows it to fit easily into extremely
thin environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
, T
Junction and Storage Temperature Range
J
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
IRF7754GPbF
V
DSS
-12V
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@ -4.5V
GS
@ -4.5V
GS
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HEXFET
Power MOSFET
R
max
I
DS(on)
D
25mΩ@V
= -4.5V
5.4A
-
GS
34mΩ@V
= -2.5V
4.6A
-
GS
49mΩ@V
= -1.8V
3.9A
-
GS
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&
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TSSOP-8
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Max.
Units
-12
V
-5.5
-4.4
A
-22
1
W
0.64
W
0.01
W/°C
±8
V
-55 to +150
°C
Max.
Units
125
°C/W
05/14/09
1

IRF7754GTRPBF Summary of contents

  • Page 1

    ... HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for management. ...

  • Page 2

    IRF7754GPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ...

  • Page 4

    IRF7754GPbF 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE ...

  • Page 6

    IRF7754GPbF 0.070 0.060 0.050 0.040 -5.5A 0.030 0.020 0.010 0.0 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge ...

  • Page 7

    Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 ...

  • Page 8

    IRF7754GPbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB H@ UT ...

  • Page 9

    G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'À€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… à "Å %À€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$#  Data ...